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Li et al. Microstructures 2023;3:2023007 https://dx.doi.org/10.20517/microstructures.2022.27 Page 3 of 10

4+
3+
2+
Figure 1. The schematic of 5 mol% Bi replaces Pb at A-site and Zr at the B-site of PZO. PZO: PbZrO . 3
0.9621, and 0.9569 for PZO, PBZ, and PZB compositions, respectively. Meanwhile, a correlation between
the tolerance factor t and the stabilized antiferroelectricity of PZO is discussed. Our work provides a new
perspective in improving energy storage properties of AFE materials and prompts the development of AFE
materials.

MATERIALS AND METHODS
(Pb Bi )ZrO (PBZ), Pb(Zr Bi )O (PZB), and pure PbZrO (PZO) films were prepared on 150-nm
0.95
3
0.95
0.05
3
3
0.05
Pt/20-nm Ti/100-nm SiO /Si substrate via sol-gel method. Pb (CH COO) ·3H O (AR, 99.5 %),
3
2
2
2
Bi (NO ) ·3H O (AR, 99 %), and Zr(OCH CH CH ) solution (70 wt%) were used as starting raw materials to
2
2
2
3 3
3 4
prepare a stable 0.2 M precursor solution. Simultaneously, 2-methoxyethanol, acetic acid, and acetylacetone
were used as solvents and stabilizers. A 10 % excess lead was added to the solvent to compensate for lead
loss during the annealing process. The completed sol was spin-coated on the substrate at 4500 rpm for 30 s,
pyrolyzed at 450 °C, and annealed at 650 °C to attain the desired thickness. The annealing process was
achieved using an RTP-500 furnace in an air atmosphere. Finally, a P electrode with a diameter of ~200 μm
t
was deposited through a magnetron sputtering system.
The crystal phase of PZO-based films was examined by grazing incident X-ray diffraction (GIXRD,
Empyrean, PANalytical, Netherlands) with Cu Kα1 radiation. The cross-section morphology of the PZO-
based thin films was measured using a field emission scanning electron microscope (SEM, Zeiss Ultra Plus,
Germany). The surface information of thin films was collected by atomic force microscopy (AFM,
Nanoscope IV, Veeco, USA). The thicknesses of PZO-based films are about 180 nm. The dielectric and
ferroelectric properties of the PZO-based thin films were measured using an impendence analyzer (Agilent
4294) and a ferroelectric workstation (Precision Premier II, Radiant Technologies Inc., USA).