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Li et al. Microstructures 2023;3:2023007 Microstructures
DOI: 10.20517/microstructures.2022.27

Research Article Open Access

The influence of A/B-sites doping on

antiferroelectricity of PZO energy storage films

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Dongxu Li , Qinghu Guo , Minghe Cao , Zhonghua Yao , Hanxing Liu , Hua Hao 1,2
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State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, School of Material Science and
Engineering, International School of Material Science and Engineering, Wuhan University of Technology, Wuhan 430070, Hubei,
China.
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Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong Laboratory, Xianhu Hydrogen Valley,
Foshan 528200, Guangdong, China.
Correspondence to: Prof. Hua Hao, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing,
School of Material Science and Engineering, International School of Material Science and Engineering, Wuhan University of
Technology, Wuhan 430070, Hubei, China; Foshan Xianhu Laboratory of the Advanced Energy Science and Technology
Guangdong Laboratory, Xianhu Hydrogen Valley, Foshan 528200, Guangdong, China. E-mail: haohua@whut.edu.cn
How to cite this article: Li D, Guo Q, Cao M, Yao Z, Liu H, Hao H. The influence of A/B-sites doping on antiferroelectricity of
PZO energy storage films. Microstructures 2023;3:2023007. https://dx.doi.org/10.20517/microstructures.2022.27

Received: 22 Sep 2022 First Decision: 2 Nov 2022 Revised: 13 Nov 2022 Accepted: 7 Dec 2022 Published: 10 Jan 2023
Academic Editors: Ruzhong Zuo, Shiqing Deng Copy Editor: Fangling Lan Production Editor: Fangling Lan

Abstract
Antiferroelectrics are a kind of unique dielectric materials, mainly due to their polarization behavior, and
composition-induced antiferroelectricity stability also draws considerable attention. In this work, single
orthorhombic phase (Pb 0.95 Bi 0.05 )ZrO (PBZ), Pb(Zr 0.95 Bi 0.05 )O (PZB), and PbZrO (PZO) films with good density and
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flatten surface was prepared on Pt/Ti/SiO /Si substrate via sol-gel method. Compared with pure PZO films, the
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PBZ and PZB films possess increased switching electric field difference Δ E due to enhanced forward switching field
and the late response of backward switching field. In terms of stabilizing AFE phase, changing the tolerance factor t
has the similar effect as Bi-doping the A/B sites in PZO, with the modification of the A-site being more effective
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than that of the B-site. PBZ films achieve a high recoverable energy density (W ) of 26.4 J/cm with energy
rec
efficiency (η) of 56.2% under an electric field of 1278 kV/cm, which exceeds other pure AFE materials. This work
provides a fundamental understanding of the crystal structure-related antiferroelectricity of PZO materials and
broadens the chemical doping route to enhance the electric properties of AFE materials.
Keywords: Antiferroelectrics, energy storage, PbZrO , thin film, switching field
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© The Author(s) 2023. Open Access This article is licensed under a Creative Commons Attribution 4.0
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