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Page 8 of 10 Li et al. Microstructures 2023;3:2023007 https://dx.doi.org/10.20517/microstructures.2022.27

Figure 7. (A) Temperature-dependent P-E loops and corresponding (C) W , η of PBZ films at 1 kHz. (B) Frequency-dependent P-E
rec
loops and corresponding (D) W , η of PBZ films at room temperature. PBZ: (Pb Bi )ZrO .
rec 0.95 0.05 3
CONCLUSIONS
PZO, PBZ, and PZB films are prepared on Pt/Ti/SiO /Si substrate via the sol-gel method. Crystallized PZO-
2
based films with orthorhombic perovskite phases exhibit low roughness and good density. The dielectric
constants of the Bi-doped PZO and pure PZO films are approximately 300, and these films possess good
frequency stability at room temperature. Compared to pure PZO films, Δ E value increases and Δ P decrease
for PBZ and PZB films hindering the effective energy storage. A/B-site doping in influencing the
antiferroelectricity of PZO has a similar effect in only considering t value, and A-site doping would be better
3
than B-site one in energy storage properties. PBZ films achieve a high W of 26.4 J/cm with a η of 56.2 %
rec
under an applied electric field of 1278 kV/cm, accompanying a suitable temperature and frequency energy
storage stabilities.
DECLARATIONS
Authors’ contributions
Conceived the idea: Li D
Performed the experiments and data analysis: Li D, Guo Q, Cao M, Yao Z, Liu H, Hao H
Provided the technical support: Cao M, Yao Z, Liu H, Hao H
Wrote and reviewed the manuscript: Li D, Hao H

Availability of data and materials
Not applicable.

Financial support and sponsorship
This work was supported by Major Program of the Natural Science Foundation of China (Grant No.
51790490), Foshan Xianhu Laboratory of the Advanced Energy Science and Technology Guangdong