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properties and explored its applicability in various applications such as channel layers for TFTs, transparent
conductive electrodes, interlayers for optoelectronics, and thermoelectric power generation.

Despite these remarkable advantages, the electrical conductivity and robustness of CuI remain inconsistent.
Unstable iodine vacancy generation and shallow acceptor energy levels from copper vacancies or p-type
dopants contribute to the instability of electrical conductivity and limit carrier concentrations. Additionally,
the tendency of CuI to grow polycrystalline structures could result in uncontrollable grain growth and
rough surfaces, degrading hole mobility. Many researchers are addressing these issues through various
strategies and fundamental studies. These challenges highlight the significant potential for further
enhancing the electrical properties of CuI, which make CuI comparable to transparent n-type metal oxide
semiconductors.

DECLARATIONS
Authors’ contributions
Structuring and writing the manuscript: Kim GH, Lee J
Editing the manuscript: Ahn K
Structuring and editing the manuscript: Kim MG

Availability of data and materials
Not applicable.

Financial support and sponsorship
This work was supported by the National Research Foundation of Korea (NRF) funded by the Ministry of
Education (NRF-2023R1A2C2005451) and the Technology Innovation Program (RS-2023-00256870 and
No. 20012617) funded by the Ministry of Trade, Industry & Energy (MOTIE, Korea).

Conflicts of interest
Kim MG is the guest editor of the Special Issue, while the other authors have declared that they have no
conflicts of interest.

Ethical approval and consent to participate
Not applicable.

Consent for publication
Not applicable.

Copyright
© The Author(s) 2024.

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