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Page 10 of 16 Dong et al. Energy Mater. 2026, 6, 600026

Figure 4. (A) CPD maps of W/O Nd-CdS Sb 2 Se 3 thin films under dark and illuminated conditions, (B) CPD maps of W Nd-CdS Sb 2 Se 3 thin
films under dark and illuminated conditions, (C) Surface potential maps of W/O Nd-CdS Sb 2 Se 3 thin films under dark and illuminated
conditions, (D) Surface potential maps of W Nd-CdS Sb 2 Se 3 thin films under dark and illuminated conditions, (E and F) SPV images of
W/O Nd-CdS and W Nd-CdS Sb 2 Se 3 thin films, (G and H) Schematic diagrams of energy band alignment and carrier transport
mechanisms in W/O Nd-CdS and W Nd-CdS CdS/Sb 2 Se 3 heterojunctions.

maximum PCE of 9.17% is achieved. In contrast, the untreated devices exhibited J , V , FF, and PCE values
SC
OC
of 28.60 mA/cm , 0.424 V, 62.27%, and 7.55%, respectively. Figure 5B presents the EQE values for both
2
devices. The integrated J values, calculated according to Supplementary Note 3 based on EQE integration,
SC
were 28.50 and 26.02 mA/cm for the devices with and without NdCl treatment, respectively, closely
2
3
matching the J values obtained from the J-V curves. Furthermore, the EQE results indicate an enhanced
SC
optical response at long wavelengths for NdCl -treated devices, suggesting reduced recombination and
3
efficient charge collection . Table 2 and Figure 5C depict the dark current-voltage (IV) results of the two
[46]
devices. The parameters were derived according to Supplementary Note 4, using the diode single-exponential
equation. From the dJ/dV vs. V plot [Figure 5D], the conductance (G) values for the device without and with
the element Nd were 4.93 × 10 and 3.10 × 10 mS/cm , respectively, indicating that the Nd-treated device
-2
2
-3
has a higher parallel resistance [47,48] . The corresponding resistance (R) and ideality factor (A) values can be
obtained from the dV/dJ vs. (J + J - GV) plot [Figure 5E]. The R values, determined from the y-intercept of
-1
SC
the fitted lines, were 2.240 and 2.173 Ω cm for devices without and with Nd, respectively. The A values
2
derived from the slopes of the fitted lines were 1.88 and 1.52, respectively. The decrease in A indicates an
improvement in diode quality . Furthermore, by fitting the linear portion of the ln(J + J - GV) vs. V-RJ
[49]
SC
plot, the saturation current density (J 0) can be determined [Figure 5F]. The Nd-treated device exhibited a