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Dong et al. Energy Mater.  2026, 6, 600026                                       Page 13 of 16





               interfacial energy structure, thereby facilitating more effective charge transport and recombination
               suppression in the device. These findings indicate that rare-earth-mediated diffusion engineering represents
               a viable approach for addressing key materials and interface challenges in Sb Se -based devices. More
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               broadly, this work provides a conceptual framework for the application of ionic diffusion control in Q1D
               semiconductors and may inform future design strategies for high-performance photovoltaic devices.

               DECLARATIONS
               Authors’ contributions
               Conducted the majority of the experiments, performed data analysis, and wrote the manuscript: Dong, X.;
               Deng, W.; Zhi, Y.
               Contributed to experimental fabrication and characterization: Shen, B.; Li, S.; Tang, C.
               Performed first-principles calculations and theoretical analysis: Lu, M.
               Assisted in experimental work and data interpretation: Jiang, S.
               Contributed to experimental implementation: Qiu, J.
               Performed device testing and characterization: Li, L.
               Supervised the experimental work, secured funding, and contributed to writing and revising the manuscript:
               Guo, H.
               Assisted in experiments and contributed to manuscript revision: Yuan, N.
               Supervised the project, secured funding, and contributed to manuscript revision: Ding, J.

               Availability of data and materials
               The data supporting the findings of this study are available from the corresponding author upon reasonable
               request.

               AI and AI-assisted tools statement
               Not applicable.


               Financial support and sponsorship
               This work was supported by Changzhou University, the National Science Foundation of China (Grant No.
               62504024, 62504023, 12202078), China Postdoctoral Science Foundation (Certificate No. 2025M770524), the
               Natural Science Foundation of Jiangsu Province (Grant No. BK20220624), the Changzhou Sci & Tech
               Program (Grant No. CJ20241086), the Natural Science Foundation of Yangzhou (YZ2024177), and the
               Yangzhou Innovation Capability Enhancement Program (YZ2022170).

               Conflicts of interest
               Cheng Tang is affiliated with the Technology Development Department, Avicas Generic Technology Co.,
               Ltd. The other authors declared that there are no conflicts of interest.


               Ethical approval and consent to participate
               Not applicable.

               Consent for publication
               Not applicable.

               Copyright
               © The Author(s) 2026.


               Supplementary Materials
               Supplementary Materials


               REFERENCES
               1.  Wen, X.; Chen, C.; Lu, S.; et al. Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency. Nat.
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