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Kim et al. Soft Sci 2024;4:33 https://dx.doi.org/10.20517/ss.2024.28 Page 15 of 31
Figure 6. (A) (left) Fabrication method for sulfur-doped iodination, including photographs of the Cu and CuI thin films. (right) DFT
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calculation of doping formation energy and doping concentration of sulfur during vapor and liquid iodination . Copyright 2022
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American Chemical Society; (B) Hole carrier concentration and mobility of selenium-doped CuI films . Copyright 2021 John Wiley &
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Sons, Inc; (C) Defect complex structure of Cs-doped CuI thin film . Copyright 2022 American Chemical Society. CuI: Copper iodide;
DFT: density functional theory.
CuI with a TiO layer, made by co-depositing Cu with TiO followed by iodination, increasing electrical
2
2
conductivity and stability, was reported by Raj et al. in 2019. A high conductive space-charge layer was
formed at the CuI-TiO interface. The carrier concentration increased from 4 × 10 to 1.3 × 10 cm , and
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2
