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Jeon et al. Soft Sci. 2025, 5, 1 https://dx.doi.org/10.20517/ss.2024.35 Page 31 of 39

1. Development of p-type MO semiconductors for CMOS implementation: To fully realize the potential
applications of oxide TFT technology, it is imperative to develop high-performance p-type MO
semiconductors. This advancement would enable the fabrication of CMOS circuits, allowing flexible
electronics to benefit from increased scalability and integration density, reduced power dissipation,
improved noise immunity, and versatile functionalities characteristic of modern advanced integrated
circuits.

2. Downscaling and short-channel devices for high-performance integrated circuits: To meet the demands
of high-performance and highly integrated circuits, future research should focus on downscaling MO TFTs
and developing short-channel devices. Techniques such as self-alignment and double-gate structures can
improve device performance and scalability. In addition, the development of low-cost, high-resolution
patterning methods is essential to ensure that these advanced devices can be manufactured economically
and with the precision required for low-cost, high-density integration.

3. Stretchable integrated systems beyond flexibility: Extending the current capabilities of flexible MO TFTs
to stretchable systems will pave the way for more robust and versatile applications in wearables and soft
electronics. This will require the development of materials and architectures that can withstand significant
mechanical deformation while maintaining high performance.

4. Integration with emerging display technologies: Future research should explore the integration of flexible
and stretchable MO-TFT backplanes with next-generation display technologies such as colloidal quantum
dot light-emitting diodes (LEDs), perovskite LEDs, and colloidal quantum well LEDs. This would facilitate
the development of advanced integrated systems for next-generation flexible displays.

By addressing these challenges, the potential of flexible MO TFTs can be fully realized, leading to significant
advances in the field of flexible and stretchable displays and electronics. Looking ahead, continued
innovation in MO TFT technology promises to unlock new opportunities in next-generation electronics.
Leveraging the mature processes of MO TFTs offers a cost-effective approach that can potentially
complement or even replace traditional silicon-based semiconductors. The lower processing temperature of
oxide TFTs compared to silicon makes them compatible with BEOL processing for M3D integration on
existing silicon CMOS chips. This compatibility allows for increased packing density of transistors and
other components, enabling the development of more powerful and compact electronic devices within a
smaller footprint. Consequently, the integration of MO TFTs into multifunctional and novel applications
beyond display technologies has the potential to revolutionize the design and functionality of future
electronic devices.

DECLARATIONS
Authors’ contributions
Initiated the reviewing idea and outlined the manuscript structure: Jeon, S.P., Jo, J.W., Kim, Y.H., Park, S.K.
Conducted the literature review and wrote the manuscript: Jeon, S.P., Jo, J.W., Nam, D., Kim, Y.H., Park, S.K.
Involved in the discussion and revised the manuscript: Jeon, S.P., Jo, J.W., Kim, Y.H., Park, S.K.
Supervision, review and editing, and project administration: Kim, Y.H., Park, S.K.

Availability of data and materials
Not applicable.