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Page 14 of 39 Jeon et al. Soft Sci. 2025, 5, 1 https://dx.doi.org/10.20517/ss.2024.35

Figure 5. (A) Schematic of DLP process and film formation (top) and photographs of integrated TFTs, I-V/C-F measurement of MIM
structure, and I -V curves of IGZO TFTs (bottom). Reproduced with permission [72] , Copyright 2014, American Chemical Society; (B)
D
G
Photograph of TFTs on PC substrate and transfer curves of TFTs (top) and electrical characteristics of TFTs under different bending
conditions or cycles (bottom). Reproduced with permission [82] , Copyright 2014, Elsevier; (C) Leakage current density-electric field of
AlO and ZAO dielectric, OM image of ZAO-based TFTs on ITO/PI substrate and transfer curves of TFTs with ZAO dielectric before and
x
after bending test. Reproduced with permission [141] , Copyright 2013, The Royal Society of Chemistry; (D) Schematic of synaptic In O
2 3
TFTs, Capacitance as a function of frequency for polymer electrolyte and transfer curve of synaptic In O TFTs on PI substrate at
2 3
different bending radii. Reproduced with permission [147] , Copyright 2020, American Chemical Society; (E) Photographs of integrated
TFTs with bending test method and transfer curves of TFTs under different bending cycles. Reproduced with permission [149] , Copyright
2019, American Chemical Society. DLP: Direct light pattern; TFTs: thin-film transistors; MIM: metal-insulator-metal; IGZO: indium
gallium zinc oxide; PC: polycarbonate; ZAO: zirconium doped aluminum oxide; OM: optical microscopy; ITO: indium-tin-oxide; PI:
polyimide.
electric double layer (EDL) forms at the interface between the semiconductor and the polymer electrolyte,
resulting in high gate capacitance of ~0.36 µF/cm and low gate voltage operations . Additionally,
2
[147]
Samanta et al. fabricated a-IGZO flexible TFTs on a PI Kapton substrate with an electrolyte dielectric (PEO
-1 -1
2
+ LiClO ) and reported high-performance electrical characteristics, exhibiting a mobility of ~42 cm ·V ·s ,
4
an on/off current ratio of ~10 , a threshold voltage of 0.7 V, and a low subthreshold swing of
5
175 mV/dec . Also, these devices also form EDL, resulting in a very high gate capacitance of ~30 µF/cm .
2
[148]
The study showed the stable performance of TFTs after bending test, emphasizing their valuable