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Page 12 of 39 Jeon et al. Soft Sci. 2025, 5, 1 https://dx.doi.org/10.20517/ss.2024.35

Figure 4. High-performance flexible MO TFTs with flexible semiconductors. (A) Schematic of combination IZO and CNT to fabricate
IZO/CNT hybrid TFTs, the normalized resistance as a function of the folded times and the photograph that repeated bending
performance of IZO/CNT hybrid TFTs. Reproduced with permission [128] . Copyright 2012, American Chemical Society; (B) Schematic of
the printed InO /EC TFT with top-gate structure, optical image of optimized InO /EC TFTs on PI substrate, transfer characteristics of
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optimized InO /EC TFTs with decreasing bending radius and Change of linear mobility of optimized InO /EC TFTs under bending tests.
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Reproduced with permission [129] . Copyright 2023, Wiley-VCH; (C) Schematic of IGZO:PI phototransistor fabricated on PI substrate and
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Transfer characteristics before and after 10,000 bending tests under dark conditions and green light at 1 mW/mm intensity. The inset
shows the photograph of the bent IGZO:PI phototransistor. Reproduced with permission [130] . Copyright 2022, American Chemical
Society; (D) Schematic of IGZO:PETE TFTs on SiO , transfer curve of the IGZO:20 W PTFE TFT in 10,000 bending cycles with bending
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radius of 5 mm, and photograph of IGZO:PTFE on PI substrate. Reproduced with permission [131] . Copyright 2018, American Chemical
Society; (E) Schematic of device structure, transfer characteristics, and variations in electrical parameters after repeated bending
200,000 cycles of InO :indicone hybrid layers TFTs. Reproduced with permission [132] . Copyright 2021, Royal Society of Chemistry. MO:
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Metal oxide; TFTs: thin-film transistors; IZO: indium zinc oxide; CNT: carbon nanotube; EC: ethyl cellulose; PI: polyimide; IGZO: indium
gallium zinc oxide; PTFE: polytetrafluoroethylene.
High-k dielectrics of MO
High-k dielectrics based on MOs exhibit excellent thermal and chemical stability compared to those based
on polymers. High-performance characteristics have been investigated by several groups using high-k
dielectrics of MOs, such as Al O , titanium dioxide (TiO ), hafnium dioxide (HfO ), yttrium oxide (Y O ),
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and zirconium dioxide (ZrO ), in flexible MO TFTs. Their approach to using high-k dielectrics of MO can
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