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Page 8 of 39 Jeon et al. Soft Sci. 2025, 5, 1 https://dx.doi.org/10.20517/ss.2024.35
Figure 2. Electrical properties of innovative materials for high-performance flexible MO TFTs. (A) Transfer curve of ITZO TFT without
the passivation under negative gate bias stress for 1 h (V = Vth - 20 V). Transfer curve and linear mobility of ITZO TFT with
G
passivation by 5-nm GaO and ZSO. Reproduced with permission [115] , Copyright 2022, AIP Publishing; (B) Schematic of fabricated
x
flexible IWO TFTs on PI substrate and transfer characteristics IWO TFTs on SiO Reproduced with permission [111] , Copyright 2018,
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American Chemical Society; (C) Transfer characteristics of LT- and TPC-treated ZnON TFTs and saturation mobility depending on gate
voltage sweep, Transfer curve of the ZnON TFTs on PEN substrate before and after delamination. Reproduced with permission [119] ,
Copyright 2018, American Chemical Society. MO: Metal oxide; TFTs: thin-film transistors; ITZO: indium tin zinc oxide; ZSO: zinc silicon
oxide; IWO: indium tungsten oxide; PI: polyimide; LT: low temperature; TPC: thermal-photochemical; PEN: polyethylene naphthalate.
specifications for gate dielectric and channel layers. The TiO /IGZO TFTs demonstrated superior
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performance with a higher field-effect mobility of 61 cm /V·s and a smaller subthreshold swing of 125 mV/
decade at an operating voltage of 1.5 V. The devices also exhibited minimal performance degradation after
bending tests, indicating excellent mechanical flexibility and stability [Figure 3A] . As shown in Figure 3B,
[82]
Lin et al. introduce a novel TFT concept utilizing low-dimensional polycrystalline heterojunctions and
