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Page 4 of 39 Jeon et al. Soft Sci. 2025, 5, 1 https://dx.doi.org/10.20517/ss.2024.35

Figure 1. Schematic diagram illustrating approaches for high-performance MO TFTs in flexible display applications. MO: Metal oxide;
TFTs: thin-film transistors.

performance of flexible MO TFTs. Doping with hydrogen, fluorine, nitrogen, and metal cations affects the
electrical performance of flexible MO TFTs. These doping techniques not only improve electrical
performance but are also compatible with the low-temperature fabrication required for flexible substrates.
Consequently, these doping processes are beneficial in improving the electrical properties of MO TFTs for
next-generation flexible electronic devices [55-60] . Fourthly, in the device structures section, we explore various
innovative structures such as island structures, junctionless structures, and advanced electrode and channel
layer architectures that enhance the flexibility of MO TFTs. These structural innovations play a crucial role
in the development of flexible electronics that maintain high performance and mechanical stability in a wide
range of wearable applications by ensuring consistent electrical performance despite significant mechanical
deformation [33,61-67] . Fifthly, in the application section, we introduce applications of high-performance
flexible TFTs, including displays and circuits that utilize high-performance flexible TFTs. Finally, we
summarize the significant advances, remaining challenges, and potential future developments in flexible
MO TFT technology.