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Keum et al. Soft Sci 2024;4:34 https://dx.doi.org/10.20517/ss.2024.26 Page 15 of 32

Figure 8. Stretchable metal-oxide TFTs employing structural designs and deformation engineering. (A) Large-area scalable stretchable
IGZO TFTs and circuitry using a dual-island structure on molecular-tailored elastomeric substrates [81] . Copyright 2024, Springer Nature;
(B) Rigid island structure ITZO TFTs utilizing an acrylic adhesive layer to provide strong adhesion between PI rigid island and soft
[78] [79]
substrate . Copyright 2022, Wiley-VCH; (C) IGZO TFTs cladded onto a serpentine-structured PI film . Copyright 2022, Springer
Nature; (D) Stretchable IGTO TFTs composed of a stress-relief buffer layer and a dielectric layer combining organic/inorganic hybrid
[73]
materials . Copyright 2020, Wiley-VCH. TFT: thin-film transistor; IGZO: InGaZnO; ITZO: indium tin zinc oxide; PI: polyimide.
substrate exhibited a carrier mobility of ~21.7 cm ·V ·s , SS of 0.68 V·decade , and on/off ratio of ~2.0 × 10
2
-1
7
-1 -1
even under 300% stretching and 200 cyclic tests.
Low-dimensional semiconducting materials
In recent years, in addition to the above-described organic and metal oxide semiconductors, carbon-based
nanomaterials and 2D materials have been actively researched for stretchable TFTs [82-86] . In particular, CNT-
based channels have been applied to various stretchable electronics owing to their inherent elasticity and
excellent carrier mobility . The inherent nature of stretchability is attributed to the formation of
[13]
percolation networks which is a unique characteristic of 1D materials [94-96] . Also, Nishio et al. reported
parylene-C-coated CNT TFTs using a room temperature chemical-vapor deposition process, resulting in