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Ao et al. Soft Sci 2024;4:3 Soft Science
DOI: 10.20517/ss.2023.34

Research Article Open Access

A facile in-situ reaction method for preparing flexible

Sb Te thermoelectric thin films
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Dongwei Ao 1,2,# , Bo Wu , Jabar Bushra , Bing Sun , Dong Yang , Yiming Zhong , Zhuanghao Zheng 3
1
School of Machinery and Automation, Weifang University, Weifang 261061, Shandong, China.
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School of Chemical Engineering and Technology, Tianjin University, Tianjin, 300072, China.
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Shenzhen Key Laboratory of Advanced Thin Films and Applications, Key Laboratory of Optoelectronic Devices and Systems of
Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen University,
Shenzhen 518060, Guangdong, China.
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Institute for Metallic Materials, Leibniz Institute for Solid State and Materials Research Dresden (IFW Dresden), Dresden
01069, Germany.
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School of Physics and Electronic Information, Weifang University, Weifang 261061, Shandong, China.
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Authors contributed equally.
* Correspondence to: Bing Sun, School of Physics and Electronic Information, Weifang University, Dongfeng East Street, Weifang
261061, Shandong, China. E-mail: 20170005@wfu.edu.cn
How to cite this article: Ao D, Wu B, Bushra J, Sun B, Yang D, Zhong Y, Zheng Z. A facile in-situ reaction method for preparing
flexible Sb Te thermoelectric thin films. Soft Sci 2024;4:3. https://dx.doi.org/10.20517/ss.2023.34
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Received: 30 Jul 2023 First Decision: 13 Sep 2023 Revised: 26 Sep 2023 Accepted: 30 Oct 2023 Published: 9 Jan 2024
Academic Editors: Zhifeng Ren, Takao Mori Copy Editor: Dong-Li Li Production Editor: Dong-Li Li
Abstract
Inorganic p-type Sb Te flexible thin films (f-TFs) with eco-friendly and high thermoelectric performance have
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attracted wide research interest and potential for commercial applications. This study employs a facile in-situ
reaction method to prepare flexible Sb Te thin films by rationally adjusting the synthesized temperature. The
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prepared thin films show good crystallinity, which enhances the electrical conductivity of ~1,440 S·cm due to the
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weakened carrier scattering. Simultaneously, the optimized carrier concentration, through adjusting the synthesis
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temperature, causes the intermediate Seebeck coefficient. Consequently, a high-power factor (16.0 μW·cm ·K at
300 K) is achieved for Sb Te f-TFs prepared at 623 K. Besides, the f-TFs also exhibit good flexibility due to the
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slight change in resistance after bending. This study specifies that the in-situ reaction method is an effective route
to prepare Sb Te f-TFs with high thermoelectric performance.
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Keywords: Thermoelectric, Sb Te , flexible thin film, thermal diffusion
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