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Ashani et al. Energy Mater. 2025, 5, 500111 https://dx.doi.org/10.20517/energymater.2025.10 Page 7 of 13

Table 1. The calculated intrinsic parameters for hole and electron carriers in the spin-up channel for the energy and temperature-
dependent relaxation time
-3
-1
Orientation Carrier type DP m*/m V (ms ) ε ∞ ε L Ρ (kgm ) ħω (meV)
LO
x Hole 2.59 0.14 7752 1.89 3.67 3410 70
Electron 1.09 0.13 7752 1.89 3.67 3410 70
y Hole 3.05 0.09 7752 1.89 3.67 3410 70
Electron 1.69 0.12 7752 1.89 3.67 3410 70

DP: Deformation potential.

Table 2. The calculated intrinsic parameters for the energy-dependent relaxation time in the spin-down channel for hole and electron
carriers
-3
-1
Orientation Carrier type DP m*/m V (ms ) ε ∞ ε L Ρ (kgm ) ħω (meV)
LO
x Hole 3 0.09 7752 1.89 3.67 3410 70
Electron 1.64 0.11 7752 1.89 3.67 3410 70
y Hole 2.64 0.15 7752 1.89 3.67 3410 70
Electron 1.14 0.16 7752 1.89 3.67 3410 70

DP: Deformation potential.

Figure 3. Spin-dependent electrical conductivities along (A) x-direction and (B) y-direction at different temperatures.

Figure 4A-D reveals the computed results. Along the x-direction (y-direction), the S eff-spin and S eff-charge are
determined by the spin-down carriers (spin-up carrier) since σ (σ ) is negligible. Due to this feature, we
↑
↓
expect the generation of a pure spin-polarized current in a particular direction when a heat gradient is
applied along that direction. At 300 K, we obtained a maximum S eff-spin of 1.8 mV/K in both electron and
hole-doped systems along the x and y directions. Note that both S eff-spin and S eff-charge have approximately the
same magnitude at all temperatures along the x and y directions. This feature results from the negligible
value of either σ or σ along each direction as discussed earlier. Indeed, we achieved a giant effective
↑
↓
Seebeck coefficient in the V S O monolayer altermagnet compared with previously reported structures. For
2 2
instance, the maximum spin Seebeck coefficients reported for GaMnAs, Pt/YIG, Cr O , HfMnGe, EuTiO 3
3
2
and V SeTeO monolayers are ~5 μV/K, ~6 μV/K, 20 μV/K, ~80 μV/K, 0.1 mV/K, and 0.64 mV/K
2
respectively at room temperature [45-49] .