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Page 8 of 17 Kumar et al. Energy Mater. 2025, 5, 500109 https://dx.doi.org/10.20517/energymater.2025.22

Figure 4. (A) Room-temperature Hall carrier concentrations n as a function of the HEA concentrations; (B) carrier concentrations n
H H
[41] [37] [10]
for the various doping elements: Ni, Sn , Pb, Fe, Co , Ag ; (C) room-temperature Hall mobilities μ as a function of the HEA
H
concentrations; (D) mobilities μ for the various doping elements: Ni, Sn [41] , Pb, Fe, Co [37] , Ag [10] . HEA: High entropy alloy.
H
Figure 5A presents the effective masses of carrier m* of the hot-pressed BST+HEA samples, obtained by the
x
Pisarenko relation . Although the S change of the BST+HEA is insignificant, the m* is slightly enhanced
[2,5]
x
at the lower HEA concentration (x = 0.1 vol%). Still, it has slightly decreased at the higher HEA
concentrations (x = 0.5 and 1.0 vol%). The enhanced m* at the lower HEA concentration (x = 0.1 vol%) can
be attributed to the resonant state effect . However, further detailed investigations are needed to clarify
[2,5]
these effects.
Using the S, Hall carrier mobilities μ , and effective masses of carrier m*, the mean free paths of carrier λ ,
e
H
and the E of the hot-pressed BST+HEA (x = 0, 0.1, 0.5, and 1.0 vol%) samples were calculated [Figure 5B]
F
x
using
(1)

(2)