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Page 8 of 10 Ouyang et al. Microstructures 2023;3:2023027 https://dx.doi.org/10.20517/microstructures.2023.22

Table 2. Energy storage densities of various BaTiO film capacitors
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BaTiO thin film heterostructures Applied voltage (V)/Field (MV/m) W (J/cm )
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3
sputter-deposited on Si rec
Au/BaTiO (510 nm)/LaNiO /Pt/Ti 160/314 81.0
3 3
Au/BaTiO (435 nm)/Pt/Ti 140/322 57.1
3
Au/BaTiO (845 nm)/Pt/Ti 260/308 50.4
3
Au/BaTiO (1,305 nm)/Pt/Ti 300/231 46.6
3
Au/BaTiO (2,610 nm)/Pt/Ti 460/177 48.8
3

Figure 5. (A) Typical polarization-electric field hysteresis loops of the LaNiO buffered BaTiO film (~510 nm) and (B) the
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corresponding energy storage density W and relative dielectric permittivityof the film in (A), as well as those of a BaTiO ceramic,
rec 3
plotted as functions of the applied electric field.

Figure 6. (A) Typical polarization-electric field (P-E) hysteresis loops of the four unbuffered BaTiO films directly deposited on Pt/Ti/Si,
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with thicknesses ranging between 435 nm and 2610 nm; (B) The relative dielectric permittivity and loss tangents as functions of the
applied voltage for the four films in (A).

prepared at lower temperatures [13-15] , making them promising for energy storage under middle-to-low
electric fields. Meanwhile, films consisting of discontinuous columnar nanograins with mixed crystalline
orientations showed an improved relative dielectric permittivity and a higher energy storage density at low
fields, with increasing film thickness. Both types of BaTiO films have shown good potential for dielectric
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energy storage applications under middle-to-low electric fields. However, the randomly-oriented films are
better material candidates in high-voltage applications (several times the commercially used voltage of
220 V).