Page 80 - Read Online
P. 80

Page 4 of 31                             Kim et al. Soft Sci 2024;4:33  https://dx.doi.org/10.20517/ss.2024.28








































                Figure 1. Intrinsic advantages of CuI and its various applications of CuI as a transparent and flexible p-type semiconductor for next-
                generation electronics devices. CuI: Copper iodide.


               THEORETICAL ANALYSIS OF COPPER IODIDE
               CuI exhibits various stable crystal structures including zinc-blende, wurtzite, tetragonal, and rock-salt
               structures, depending on the temperature and pressure. The γ-CuI adopted a zinc-blend structure below
               643 K, and β-CuI, with a wurtzite structure, is stable between 643 and 673 K. Above 673 K, there exists the
               α-CuI with a rock-salt structure; with rising temperature, an anharmonic thermal vibration increases,
               enhancing ionic conductivity . Kaindl et al. reported these phase transitions with different pressures at
                                        [50]
               4.2 K. The structural transition from γ-CuI to β-CuI, from α-CuI to a tetragonal phase, and from the
               tetragonal to α-CuI occurs at 18, 46, and 90 kbar, respectively. For γ-CuI, the hybridization between an
               iodine 5p orbital and a copper 3d orbital decreases with increasing pressure. Conversely, the hybridization
                                                             [51]
               increases with pressure for β-CuI and tetragonal phases .

               The I 5p-Cu 3d orbital hybridization facilitates the movement of hole carriers by creating a more dispersed
               valance band and thus the delocalization of the electronic state within the band induces high μ . Moreover,
                                                                                               h
               the valance band of CuI is composed of heavy hole (hh) and light hole (lh) bands. Yu et al. reported the
                                                                        [52]
               band structure of CuI and calculated a direct bandgap of 2.95 eV . Figure 2A shows the energy levels of
               copper and halide orbitals within the bandgap, along with a diagram illustrating the interaction between Cu
               and I (halide) orbitals in the conduction and valence bands. The CBM is an antibonding state, composed of
               Cu 4s orbitals and I 5p orbitals. For the VBM, they also confirmed a strong hybridization . Additionally,
                                                                                            [52]
               Tanaka et al. confirmed the energy separation of hh and lh. They measured the separation using
                                                                                   [53]
               photoluminescence due to a thermal deformation in different  substrates . Wang et al. reported
               computational results of the band structure of CuI and its intrinsic defects. They calculated the direct
   75   76   77   78   79   80   81   82   83   84   85