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Kim et al. Soft Sci 2024;4:33 Soft Science
DOI: 10.20517/ss.2024.28

Review Article Open Access

Transparent p-type copper iodide for next-

generation electronics: fundamental physics and
recent research trends

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Ga Hye Kim , Jiyong Lee , Kyunghan Ahn, Myung-Gil Kim *
School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
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Authors contributed equally.
Correspondence to: Prof. Myung-Gil Kim, School of Advanced Materials Science and Engineering, Sungkyunkwan University,
2066 Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea. E-mail: myunggil@skku.edu
How to cite this article: Kim GH, Lee J, Ahn K, Kim MG. Transparent p-type copper iodide for next-generation electronics:
fundamental physics and recent research trends. Soft Sci 2024;4:33. https://dx.doi.org/10.20517/ss.2024.28

Received: 2 Jul 2024 First Decision: 6 Aug 2024 Revised: 25 Aug 2024 Accepted: 3 Sep 2024 Published: 14 Sep 2024
Academic Editor: Zhigang Chen Copy Editor: Pei-Yun Wang Production Editor: Pei-Yun Wang

Abstract
Development of transparent and flexible p-type semiconductors has been a significant challenge for scientific
curiosity and industrial interest. Unlike n-type metal oxide semiconductors, such as zinc oxide (ZnO), In O , and
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SnO , transparent p-type oxide semiconductors have suffered from low optical transparency and poor electrical
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performance. To overcome the intrinsic limitation of p-type oxide semiconductors, copper iodide (CuI) is gaining
attention as a multifunctional p-type semiconductor with excellent optical transparency, decent mechanical
flexibility, high hole mobility, high electrical conductivity, and even promising thermoelectric performance. Here, we
present the recent progress of CuI-based transparent p-type electronics from materials to applications. In this
review, we summarize the physical and chemical properties of CuI by reviewing computational studies, focusing on
the band structure, intrinsic defects, and promising dopants. Additionally, various applications of CuI, including its
use as active layers, hole transport layers (HTLs), transparent electrodes, and energy harvesters, are examined,
highlighting important studies and their findings. Strategies to enhance device performance, such as controlling
carrier concentrations and refining fabrication methods, are discussed, offering insights for developing next-
generation electronic devices. Finally, we discuss current challenges and perspective opportunities of CuI-based
transparent p-type electronics.

Keywords: Copper iodide, p-type semiconductor, optoelectronic materials, transparent conductive electrodes,
transparent energy harvesting materials

© The Author(s) 2024. Open Access This article is licensed under a Creative Commons Attribution 4.0
International License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, sharing,
adaptation, distribution and reproduction in any medium or format, for any purpose, even commercially, as
long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and
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