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Page 6 of 14                              Jo et al. Soft Sci 2024;4:27  https://dx.doi.org/10.20517/ss.2024.19






































                Figure 2. P 2p XPS spectra of (A) pristine InP and InP-Zn(OA)  cores; (B) a series of InP-ZnX  cores; and (C) a series of InP-ZnX -
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                Zn(OA)  cores; (D)  P NMR spectra of InP-Zn(OA)  and a series of InP-ZnX -Zn(OA)  cores; Photographs of a set of (E) InP-ZnX  and
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                (F) InP-ZnX -Zn(OA)  cores under UV irradiation. XPS: X-ray photoelectron spectroscopic; InP: indium phosphide; NMR: nuclear
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                magnetic resonance; UV: ultraviolet.
               the time-resolved PL decay profiles of the same set of InP/ZnSe/ZnS QDs showed a slower decay behavior
               with a thicker ZnSe shell [Supplementary Figure 3C]. We will further discuss different ZnSe shell
               thicknesses produced as a function of equimolar ZnX  later.
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               Surface of highly oxyphilic InP is susceptible to the oxidation. Under the synthetic environment of InP QDs
               in the presence of carboxylic acids, the surface oxide species (e.g., InPO ) becomes easily formed by water
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               released via the ketonization reaction (R COOH + R COOH → R COR  + CO  + H O) during both core
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               growth and subsequent shelling stage at elevated temperatures [32,36,44] . Formation of such surface oxide is well
               verified in the pristine InP and Zn(OA) -reacted InP core [InP-Zn(OA) ] samples by an XPS analysis
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               [Figure 2A]. The P 2p spectrum clearly shows the presence of two chemical environments for P atoms,
               consisting of the strong peak at 127.6-129.8 eV for InP and the weak peak at 131.7-134.1 eV for InPO . The
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               latter peak was intensified upon an additional reaction of InP core with Zn(OA) , indicative of further
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               promotion of InPO  formation. Meanwhile, ZnX -reacted InP cores (InP-ZnX ) did not exhibit a notable
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               change in XPS P spectrum regardless of halide type [Figure 2B] compared to pristine InP core due to the
               oxygen-free Zn halide sources, while the surface oxide formed during core growth still remained. For an
               effort to remove the remnant surface InPO , we introduced a hybrid Zn process, where the growth of ZnSe
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               shell proceeds under co-use of ZnX  and Zn(OA) . Here, we denote InP core reacted with ZnX  and
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               Zn(OA)  as InP-ZnX -Zn(OA) . We hypothesized that OA present in Zn(OA)  stock solution can
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               participate in the reaction with co-existing ZnX , yielding a byproduct of hydrogen halide (HX, X = Cl, Br,
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               I) . As evident from XPS spectra of a series of InP-ZnX -Zn(OA)  [Figure 2C], the signal of InPO  was
                 [45]
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               greatly suppressed, indicative of its effective removal, relative to the prior samples of InP-ZnX . These
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               outcomes are in line with the earlier efforts to eliminate the surface oxide on “red-emissive” InP core via
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