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Jo et al. Soft Sci 2024;4:27 Soft Science
DOI: 10.20517/ss.2024.19

Research Article Open Access

Unity quantum yield of InP/ZnSe/ZnS quantum dots

enabled by Zn halide-derived hybrid shelling
approach

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*
Dae-Yeon Jo , Hyun-Min Kim , Goo Min Park, Donghyeok Shin, Yuri Kim, Yang-Hee Kim, Chae Woo Ryu ,
Heesun Yang *
Department of Materials Science and Engineering, Hongik University, Seoul 04066, Republic of Korea.
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Authors contributed equally.
* Correspondence to: Prof. Heesun Yang, Prof. Chae Woo Ryu, Department of Materials Science and Engineering, Hongik
University, 94, Wausan-ro, Mapo-gu, Seoul 04066, Republic of Korea. E-mail: hyang@hongik.ac.kr; cryu@hongik.ac.kr
How to cite this article: Jo DY, Kim HM, Park GM, Shin D, Kim Y, Kim YH, Ryu CW, Yang H. Unity quantum yield of
InP/ZnSe/ZnS quantum dots enabled by Zn halide-derived hybrid shelling approach. Soft Sci 2024;4:27. https://dx.doi.org/10.
20517/ss.2024.19

Received: 30 Apr 2024 First Decision: 4 Jun 2024 Revised: 12 Jun 2024 Accepted: 21 Jun 2024 Published: 17 Jul 2024

Academic Editor: YongAn Huang Copy Editor: Pei-Yun Wang Production Editor: Pei-Yun Wang

Abstract
Environment-benign indium phosphide (InP) quantum dots (QDs) show great promise as visible emitters for next-
generation display applications, where bright and narrow emissivity of QDs should be required toward high-
efficiency, high-color reproducibility. The photoluminescence (PL) performance of InP QDs has been consistently,
markedly improved, particularly owing to the exquisite synthetic control over core size homogeneity and core/shell
heterostructural variation. To date, synthesis of most high-quality InP QDs has been implemented by using zinc
(Zn) carboxylate as a shell precursor that unavoidably entails the formation of surface oxide on InP core. Herein,
we demonstrate synthesis of superbly bright, color-pure green InP/ZnSe/ZnS QDs by exploring an innovative
hybrid Zn shelling approach, where Zn halide (ZnX , X = Cl, Br, I) and Zn oleate are co-used as shell precursors. In
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the hybrid Zn shelling process, the type of ZnX is found to affect the growth outcomes of ZnSe inner shell and
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consequent optical properties of the resulting heterostructured InP QDs. Enabled by not only the near-complete
removal of the oxide layer on InP core surface through the hybrid Zn shelling process but the controlled growth rate
of ZnSe inner shell, green InP/ZnSe/ZnS QDs achieve a record quantum yield (QY) up to unity along with a highly
sharp linewidth of 32 nm upon growth of an optimal ZnSe shell thickness. This work affords an effective means to
synthesize high-quality heterostructured InP QDs with superb emissive properties.

Keywords: InP quantum dots, hybrid zinc shelling process, ZnSe inner shell, quantum yield

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