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Rehman et al. Energy Mater 2024;4:400068  https://dx.doi.org/10.20517/energymater.2024.06   Page 29 of 64































                Figure 13. (A) Cycling behavior of GeP anode. (B) Morphology and structural changes in GeP: (a-c) before sodiation and (d-f) after
                sodiation via TEM, HR-TEM, and SAED. (C) Structural evolution of the GeP nanoflake during sodiation recorded by SAED patterns. (a)
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                GeP crystal before sodiation, (b and c) Na  intercalation into the GeP lattice with the gradual increase in d-spacing (001), (d) Formation
                of NaGe P  intermediate phase, and (e and f) Amorphous Na-Ge and Na-P alloys. Reproduced with permission from [170] . Copyright ©
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                2019 Elsevier.





















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                Figure 14. (A) (a) The (dis)charging curves at 0.1 A  g , (b) Rate performance at various ampere densities, (c) Cycling behavior at
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                0.5 A g , and (d) High-rate cycling at 10 A g  for GES-A and GES-C samples. (B) (a) Digital photos of electrodes and separators before
                cycling and after completing 100 cycles. (b and c) Corresponding SEM images after 100 cycles for GES-A and GES-C samples. (d)
                Mechanistic layout of inner stress. (e) Raman spectra before and after cycling for GES-A and GES-C. (f-i) TEM supported illustration of
                enhanced structural stability after 100 cycles for (f and g) GES-A and (h and i) GES-C. Reproduced with permission from [173] . Copyright
                © 2022 John Wiley & Sons, Inc.
               A Ge-based C NF with N, S doping has been fabricated by centrifugal spinning and subsequent thermal
               treatment methodology to yield N, S-Ge@PCNF . N, S doping, in addition to the porous CF, improved
                                                         [174]
               electronic conduction and ionic mobility in a way to sustain a capacity of 443 mAh g  over 200 cycles as an
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               SIB anode. The composite also delivered a rate capacity of 300 mAh g  at 1 A g  in contrast to a capacity of
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               236  mAh  g   delivered  by  the  composite  with  no  N  or  S  functionalities  (Ge@PCNF).  Detailed
               characterization of the N, S-Ge@PCNFs composite showed uniformly dispersed Ge nano-assemblies on
               tubular  PCNFs.  Overall,  N,  S-doping  imparted  conductivity  enhancement  that,  together  with
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