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Rehman et al. Energy Mater 2024;4:400068 https://dx.doi.org/10.20517/energymater.2024.06 Page 27 of 64
Figure 12. (A) (a) A schematic illustration of in-situ TEM setup. (b) STEM image series captured in real-time showing P volume
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expansion during sodiation (scale bar: 200 nm). (c) Simulated SOS according to the P morphological evolution of the region labeled
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with a blue rectangle in image (b). (d) EDS maps of phosphorus (green), sodium (yellow), and carbon (red) elements of the region
labeled with a red rectangle in image (b) (scale bar: 200 nm). (e) Length changes of four P segments marked in image (b) as a
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function of time during the sodiation process. (B) Extended cycling of the P @CNF anodes with variable current densities. Reproduced
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[157]
with permission from . Copyright © 2020 Springer Nature Limited.
300% corresponded to a higher sodiated state than NaGe and closely resembled Na Ge. These findings
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highlight the structural robustness with higher potential of Ge as an SIB anode.
Avery cheap and benign combination of amorphous Ge loaded onto the graphite network has achieved an
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augmented performance (526 mAh g over 120 cycles along with 160 mAh g at 10 C of ampere density)
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that highlights possibilities for more superior capacity Ge-based SIB anodes particularly having 2D and 3D
[167]
structures . A highly functionalized C source derived from dopamine has been added to mitigate the
[168]
conductivity and sluggish kinetics and stabilize the Zn GeO -derived SIB anode . In comparison with the
2
4
isolated Zn GeO (capacity = 113 mAh g at 0.1 A g over 50 cycles), the C-coated Zn GeO micro-rods
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-1
4
2
4
2
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delivered a suitable capacity of 317 mAh g (CE 88%) at 0.1 A g over 50 cycles with a rate capability of
150 mAh g at 2 A g . The dopamine-derived amorphous carbon offered a large electrode-electrolyte
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interface to facilitate ion/electron transportation at shorter distances apart from volume buffering.
A highly reversible capacity-delivering SIB anode synthesized by a template-free solvothermal approach
with controlled nanosized (10 nm) germanium phosphide (GeP ) organized into micro-spherical
x
[169]
architecture has been presented by Tseng et al. . The superior patterning without an additional C matrix
could cope with volume stresses and lead to an excellent performance, which is a testament to the advantage
of the structural design approach. A high ICE of 65.28% along with a capacity of 704 mAh g was acquired
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