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Ouyang et al. Microstructures 2023;3:2023027 Microstructures
DOI: 10.20517/microstructures.2023.22

Research Article Open Access

Grain engineering of high energy density BaTiO
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thick films integrated on Si

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Jun Ouyang 1,2,3 , Xiaoman Teng , Meiling Yuan , Kun Wang , Yuyao Zhao , Hongbo Cheng , Hanfei
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Zhu , Chao Liu , Yongguang Xiao , Minghua Tang , Wei Zhang , Wei Pan 7
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Institute of Advanced Energy Materials and Chemistry, Jinan Engineering Laboratory for Multi-Scale Functional Materials,
School of Chemistry and Chemical Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250353,
Shandong, China.
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Key Laboratory of Key Film Materials & Application for Equipment, School of Material Sciences and Engineering, Xiangtan
University, Xiangtan 411105, Hunan, China.
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Key Laboratory for Liquid-Solid Structure Evolution and Processing of Materials (Ministry of Education), School of Materials
Science and Engineering, Shandong University, Jinan 250061, Shandong, China.
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Academic Affairs Office Civil Aviation University of China, Tianjin 300300 China.
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China Tobacco Shandong Industrial Co., Ltd., Jinan 250014, Shandong, China.
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College of Electronic and Optical Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023, China.
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State Key Laboratory of New Ceramics and Fine Processing, Tsinghua University, Beijing 100084, China.
Correspondence to: Prof./Dr. Jun Ouyang, School of Chemistry and Chemical Engineering, Qilu University of Technology, #3501
Daxue Road, Jinan 250353, Shandong, China. E-mail: ouyangjun@qlu.edu.cn
How to cite this article: Ouyang J, Teng X, Yuan M, Wang K, Zhao Y, Cheng H, Zhu H, Liu C, Xiao Y, Tang M, Zhang W, Pan W.
Grain engineering of high energy density BaTiO thick films integrated on Si. Microstructures 2023;3:2023027.
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https://dx.doi.org/10.20517/microstructures.2023.22
Received: 5 May 2023 First Decision: 22 May 2023 Revised: 30 May 2023 Accepted: 2 Jun 2023 Published: 13 Jun 2023
Academic Editor: Shujun Zhang Copy Editor: Fangling Lan Production Editor: Fangling Lan
Abstract
Ferroelectric (FE) ceramics with a large relative dielectric permittivity and a high dielectric strength have the
potential to store or supply electricity of very high energy and power densities, which is desirable in many modern
electronic and electrical systems. For a given FE material, such as the commonly-used BaTiO , a close interplay
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between defect chemistry, misfit strain, and grain characteristics must be carefully manipulated for engineering its
film capacitors. In this work, the effects of grain orientation and morphology on the energy storage properties of
BaTiO thick films were systematically investigated. These films were all deposited on Si at 500 °C in an oxygen-
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rich atmosphere, and their thicknesses varied between ~500 nm and ~2.6 μm. While a columnar nanograined
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BaTiO film with a (001) texture showed a higher recyclable energy density W (81.0 J/cm vs. 57.1 J/cm
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@3.2 MV/cm, ~40% increase) than that of a randomly-oriented BaTiO film of about the same thickness
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(~500 nm), the latter showed an improved energy density at a reduced electric field with an increasing film
thickness. Specifically, for the 1.3 μm and 2.6 μm thick polycrystalline films, their energy storage densities W
rec

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