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Teng et al. Microstructures 2023;3:2023019     https://dx.doi.org/10.20517/microstructures.2023.07                                                                             Page 7 of 29



                          Table 1. Various materials for filling CNTs

                          Material        CNT                 Method         Outcomes                                                                                     Applications                            Ref.
                          Sn              MWCNTs              Arc discharge  Enhance microwave absorption.                                                                Microwave absorbent                     [45]
                          S               SWCNTs/DWCNTs CVT                  Self-assembly of conductive sulfur chains in CNTs is realized.                                                                       [46]

                          Te              DWCNTs              CVT            Observe the Raman response of tellurium-filled CNTs.                                         Optoelectronic devices                  [47]
                          Eu              SWCNTs              CVT            A high yield controlled synthesis method for Eu nanowires is proposed.                       Electronic devices                      [48]
                          GaTe/SnS/Bi Se SWCNTs               CVT            GaTe, SnS, and Bi Se  are encapsulated into the SWCNTs for the first time.                   Electronic devices                      [49]
                                      2  3                                                  2  3
                          Nb/V/TiTe       MWCNTs              CVT            MTe  are synthesized in CNTs for the first time.                                                                                     [50]
                                     3                                           3
                          NbSe 3          MWCNTs              In-tube        A single nanowire NbSe  is synthesized for the first time.                                                                           [51]
                                                                                                  3
                                                              reaction
                          Bi Te /GaSe     SWCNTs              In-tube        Bi Te  and GaSe are encapsulated into the SWCNTs for the first time.                         Electronic devices                      [52]
                            2  3                                              2  3
                                                              reaction
                          CsPbBr /CsSnI   SWCNTs              In-tube        The smallest isolated halide perovskite structure is synthesized within CNTs.                Optoelectronic devices                  [53]
                                 3      3
                                                              reaction
                          Fe-S            CNTs                CVT            Fe-S@CNTs are prepared using CNT as a reactor.                                               Anode material                          [54]
                          CdSe            SWCNTs              In-tube        CdSe nanowires are prepared by self-assembly and directional assembly under the constraint of   Optoelectronic devices               [55]
                                                              reaction       SWCNTs.
                          ReS 2           SWCNTs              In-tube        Ultrathin ReS  nanoribbons are synthesized for the first time.                               Nano-electrodes                         [56]
                                                                                        2
                                                              reaction
                          HfTe            CNTs                In-tube        HfTe  nanoribbons are synthesized by CVT in CNTs.                                            Metal-semiconductor Schottky            [57]
                               2                                                 2
                                                              reaction                                                                                                    heterojunctions
                          WS              SWCNTs/             In-tube        WS  nanoribbons with uniform widths are synthesized using CNTs as templates.                 Spintronics                             [58]
                              2                                                 2
                                          DWCNTs              reaction
                          SnSe            SWCNTs              CVT            It is demonstrated that SnSe form ordered nanocrystals in narrow SWCNTs, and the band gap is   Solar cells                           [59]
                                                                             significantly enlarged.

                          MoS             SWCNTs/DWCNTs In-tube              MoS  nanoribbons with uniform width are synthesized using CNTs as a template.                Synthesis method                        [60]
                              2                                                  2
                                                              reaction
                          C               SWCNTs              CVT            The relationship between electron dose and the bimolecular reaction of fullerene in CNTs is reported.                                [61]
                            60
                          N@C  60         SWCNTs              CVT            N@C @SWCNTs are synthesized, and it was found that pod samples could be converted into                                               [62]
                                                                                 60
                                                                             DWCNTs.
                          Gd@C            MWCNTs              CVT            The transport characteristics of Gd@C @CNTs as a field effect transistor channel are introduced.  Electronic devices                 [63]
                                82                                                                            82
                          Sc N@C          SWCNTs              CVT            Nano-pods formed by Sc N@C  are prepared and characterized.                                                                          [64]
                            3     80                                                              3     80
                          La@C            SWCNTs              CVT            EELS is used to measure the charge transfer between materials.                                                                       [65]
                                82
                          Gd @C  92       SWCNTs              CVT            The dynamic behavior of limit atoms in metallic fullerenes is observed by HRTEM                                                      [66]
                             2

                          MWCNTs: Multi-walled carbon nanotubes; DWCNTs: double-walled carbon nanotubes; CVT: chemical vapor transport; EELS: electron energy loss spectroscopy; HRTEM: high-resolution transmission electron
                          microscopy.
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