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Page 2 of 10         Yang et al. Microstructures 2023;3:2023005  https://dx.doi.org/10.20517/microstructures.2022.24

               Keywords: Graphene, ZnO, positive photoconductance, negative photoconductance, broadband photodetector




               INTRODUCTION
               Photodetectors, which convert optical to electrical signals, play a key role in optoelectronic systems . In
                                                                                                     [1-6]
               contrast to photodetectors that respond only to a specific wavelength range, broadband photodetectors can
               detect light over a broad spectral range and it is therefore essential to various techniques, including image
                                                                               [7-9]
               sensing, optical communications, environmental monitoring, and so on . Broadband photodetectors
               responding to light over a wide spectral range from ultraviolet (UV) to infrared have been developed from a
               variety of materials, such as two-dimensional (2D) materials, perovskites, organic semiconductors, and so
               on. However, the specific band of the incident light usually cannot be distinguished [10-13] . Therefore,
               broadband photodetectors with the capacity to distinguish different wavelength bands are highly desirable
               and can provide additional spectral information. For instance, UV-visible distinguishable broadband
               photodetectors are required for astronomical detection, information storage and other applications [1,14-16] .
               However, it is challenging to detect and distinguish UV and visible light using a single photodetector.


               Graphene is a promising material for broadband photodetectors due to its wide-range absorption spectrum
               and high carrier mobility [17-22] . More interestingly, both positive and negative photoconductance responses
               have been reported for graphene photodetectors [23-25] . Ordinarily, light with photon energy larger than the
               band gap generates carriers in the valence and conduction bands of a semiconductor material, thereby
               increasing the conductivity. Such positive photoconductance (PPC) has been observed in most
               photodetectors [26,27] . In contrast to PPC, the conductivity in some low-dimensional materials may decrease
               under illumination, i.e., negative photoconductance (NPC) [24,28-30] . This abnormal phenomenon has been
               observed in photodetectors based on graphene, InAs nanowires, ZnS nanoparticles, carbon nanotubes,
               monolayer MoS  and so on [23,30-32] . NPC in graphene is related to surface adsorbents, which act as scattering
                             2,
               centers and decrease the carrier mobility under light illumination, leading to a decrease in conductivity [33,34] .
               In contrast, graphene photodetectors with PPC and high responsivity can also be obtained from van der
               Waals heterostructures composed of graphene and other materials [7,35] . The opposing photoconductivity
               changes of photodetectors with PPC and NPC can be easily distinguished . Therefore, UV-visible
                                                                                   [36]
               distinguishable broadband photodetectors may be realized by integrating the two different response
               mechanisms in the same photodetector.


               Here, we present a UV-visible distinguishable photodetector composed of graphene and zinc oxide (ZnO)
               quantum dots (QDs). Bare graphene shows NPC under illumination from the UV to visible region. To
               make the response in the UV and visible region distinguishable, ZnO QDs are coated onto graphene to
               convert the NPC response under UV illumination to a PPC response. ZnO is chosen to absorb UV
               illumination due to its wide bandgap (3.3 eV, ~376 nm), low cost and abundant nanostructures [37-42] .
               Moreover, given that the surface states of ZnO are sensitive to the environment, the applications of ZnO
               photodetectors may further be extended to the chemical, medical and biological fields [43-48] . In the
               graphene/ZnO QD van der Waals heterostructure, electrons generated in the ZnO QDs by UV light can
               transfer to the graphene and enhance its conductivity, resulting in PPC in the UV region. Furthermore, the
               graphene/ZnO QD photodetector retains the NPC response in the visible region because the ZnO QDs do
               not absorb visible light. In this context, the graphene/ZnO QD photodetector shows PPC under UV light
               and NPC under visible light, thereby realizing the detection and distinction of UV and visible illumination
               simultaneously.
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