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Figure 6. Future outlook for zero-power optoelectronic synapses for wearable neuromorphic platforms. Reproduced with permission [50] .
Copyright 2025, American Chemical Society. Reproduced with permission [51] . Copyright 2024, John Wiley & Sons. Reproduced with
permission [52] . Copyright 2021, Springer Nature. Reproduced with permission [53] . Copyright 2024, American Chemical Society. Reproduced
with permission [54] . Copyright 2021, John Wiley & Sons. Reproduced with permission [55] . Copyright 2022, IOP Publishing. Reproduced with
permission [56] . Copyright 2020, American Chemical Society. Reproduced with permission [57] . Copyright 2025, John Wiley & Sons.
Reproduced with permission [58] . Copyright 2021, Springer Nature. Reproduced with permission [59] . Copyright 2019, American Chemical
Society. Reproduced with permission [60] . Copyright 2023, John Wiley & Sons. Reproduced with permission . Copyright 2015, John Wiley
[61]
& Sons. Reproduced with permission [62] . Copyright 2018, John Wiley & Sons. BHJ: Bulk heterojunction; CTE: charge-transfer emission;
OLED: organic light-emitting diode; OPV: organic photovoltaic; PSC: postsynaptic current; ETL: electron transport layer; HTL: hole
transport layer; EPSC: excitatory postsynaptic current; IPSC: inhibitory postsynaptic current; ITO: indium tin oxide; IGZO: indium gallium
zinc oxide; ST: synaptic transistor; TSM: threshold switching memristor; GND: ground.

light-matter coupling and exciton dissociation efficiency under low-intensity illumination will be crucial to
realizing practical zero-power operation in wearable environments.