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Ao et al. Soft Sci 2024;4:3 https://dx.doi.org/10.20517/ss.2023.34 Page 7 of 9

Figure 5. (A) The measured room temperature σ as a function of T ; (B) Comparison between the measured and SPB model calculated
diff
μ as a function of n ; (C) The measured room temperature S as a function of T ; (D) Comparison between the measured and SPB
diff
h
2
2
model calculated S as a function of n ; (E) Comparison between the measured S σ and the calculated S σ based on the SPB model at
h
room temperature; (F) The R/R and S/S changes of Sb Te with bending cycles of 1,000 and a bending radius of 18 mm. SPB: Single
0 0 2 3
parabolic band.
S. The high S σ of our prepared Sb Te f-TFs is competitive with that of the reported Sb Te f-TFs
2
3
2
3
2
[Supplementary Table 1]. Herein, the prepared Sb Te f-TFs possess high bending resistance. The high
3
2
bending resistance of Sb Te thin film is mainly attributed to the PI flexible substrate and Nano-scale
3
2
thickness Sb Te 3 [35,36] . Both the resistance change (∆R/R ) and Seebeck coefficient change (∆S/S ) are lower
0
0
2
than 10% under the bending cycles of 1,000 and bending radius of 18 mm [Figure 5F].
CONCLUSION
In this work, we successfully prepared Sb Te f-TFs with high TE performance and bending resistance by the
2
3
thermal diffusion method. Sb Te f-TFs with standard stoichiometric ratios were achieved, which rationally
2
3
tuned T and increased the crystallinity of Sb Te f-TFs. With increasing T , tuning crystallinity increased
3
diff
diff
2
σ and thus attenuated carrier scattering, achieving a high σ of ~1,440 S·cm at T = 643 K. The moderate S
-1
diff
larger than 95 μV·K has been achieved due to standard stoichiometric ratios of Sb Te f-TFs.
-1
2
3
Correspondingly, an excellent room temperature S σ of 16.0 μW·cm ·K at T = 623 K has been achieved.
-2
2
-1
diff
Besides, a ΔR/R of < 10% is achieved after 1,000 bending cycles with a bending radius of 18 mm, indicating
0
good bending resistance.
DECLARATIONS
Authors’ contributions
Made substantial contributions to the conceptualization and design of methodology and writing - original
draft: Ao D, Wu B, Sun B, Yang D, Zhong Y