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Hansen et al. Microstructures 2023;3:2023029                          Microstructures
               DOI: 10.20517/microstructures.2023.17



               Research Article                                                              Open Access



               Crystallographic variant mapping using precession

               electron diffraction data


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               Marcus H. Hansen , Ainiu L. Wang , Jiaqi Dong , Yuwei Zhang , Tejas Umale , Sarbajit Banerjee , Patrick
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               Shamberger , Matt Pharr , Ibrahim Karaman , Kelvin Y. Xie 1
               1
                Department of Materials Science and Engineering, Texas A&M University, College Station, TX 77843, USA.
               2
                Department of Mechanical Engineering, Texas A&M University, College Station, TX 77843, USA.
               3
                Department of Chemistry, Texas A&M University, College Station, TX 77843, USA.
               Correspondence to: Prof. Kelvin Y. Xie, Department of Materials Science and Engineering, Texas A&M University, College
               Station, TX, 77843, USA. E-mail: kelvin_xie@tamu.edu
               How to cite this article: Hansen MH, Wang AL, Dong J, Zhang Y, Umale T, Banerjee S, Shamberger P, Pharr M, Karaman I, Xie
               KY. Crystallographic variant mapping using precession electron diffraction data. Microstructures 2023;3:2023029.
               https://dx.doi.org/10.20517/microstructures.2023.17
               Received: 15 Apr 2023  First Decision: 4 May 2023  Revised: 7 Jun 2023  Accepted: 19 Jun 2023  Published: 5 Jul 2023
               Academic Editor: Xiaozhou Liao  Copy Editor: Fangyuan Liu  Production Editor: Fangyuan Liu
               Abstract
               In this work, we developed three methods to map crystallographic variants of samples at the nanoscale by
               analyzing precession electron diffraction data using a high-temperature shape memory alloy and a VO  thin film on
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               sapphire as the model systems. The three methods are (I) a user-selecting-reference pattern approach, (II) an
               algorithm-selecting-reference-pattern approach, and (III) a k-means approach. In the first two approaches,
               Euclidean distance, Cosine, and Structural Similarity (SSIM) algorithms were assessed for the diffraction pattern
               similarity quantification. We demonstrated that the Euclidean distance and SSIM methods outperform the Cosine
               algorithm. We further revealed that the random noise in the diffraction data can dramatically affect similarity
               quantification. Denoising processes could improve the crystallographic mapping quality. With the three methods
               mentioned above, we were able to map the crystallographic variants in different materials systems, thus enabling
               fast variant number quantification and clear variant distribution visualization. The advantages and disadvantages of
               each approach are also discussed. We expect these methods to benefit researchers who work on martensitic
               materials, in which the variant information is critical to understand their properties and functionalities.

               Keywords: Crystallographic variant mapping, precession electron diffraction (PED), image similarity quantification,
               k-means








                           © The Author(s) 2023. Open Access This article is licensed under a Creative Commons Attribution 4.0
                           International License (https://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, sharing,
                           adaptation, distribution and reproduction in any medium or format, for any purpose, even commercially, as
               long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and
               indicate if changes were made.

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