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Deng et al. Microstructures 2023;3:2023044  https://dx.doi.org/10.20517/microstructures.2023.42  Page 11 of 18































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                Figure 9. (A) Giant magnetoresistance effect of Mn GaC at selected  temperatures  ; (B) magnetoresistance of Mn  Ni  N after
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                cooling in zero field and in ±9 T [27] ; (C) anomalous Hall conductivity versus field measured in single crystalline Mn Ni 0.35 Cu 0.65 N film on
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                MgO (111) substrate [30] .
               magnetoresistance of about 50% under an external magnetic field of 3 kOe. With the further increase of the
               external magnetic field, the magnetoresistance value is almost unchanged, but its peak width is broadened
               and reaches 20 K at 50 kOe. Kamishima et al. suggested that the magnetoresistance effect in Mn GaC is
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               aroused by the difference of resistivity between AFM and FM states, and the external magnetic field can
               induce the temperature shift of AFM-FM phase transition . In addition, an electroresistance-like behavior
                                                                [26]
               of the antiperovskite Mn GaC, revealed by a resistivity change of 50% due to the local Joule heating, is
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               reported around the collinear AFM- intermediate phase transition. The currents significantly reduce the
               proportion of the higher resistivity AFM phase relative to the lower resistivity interphase with warming,
               showing a change in resistivity. On the other hand, for a non-coplanar magnet Mn Ni N with triangular
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               lattice, a high-resistivity state can be frozen along the direction of the cooling field while a low-resistivity
               state is determined in the reversed field direction, indicating an asymmetry with respect to H [Figure 9B].
               This characteristic further demonstrates a switchable scalar spin chirality of Mn Ni N.
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               Recently, the anomalous Hall effect, originating from the nonvanishing momentum space Berry curvature,
               has been reported in the non-collinear AFM antiperovskites. Among the magnetic orders, a typical non-
               collinear AFM configuration is Γ , whose atomic magnetic moments point to the triangle "inside" or
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               "outside" in the triangular lattice of the antiperovskite (111) surface, forming a phase similar to that of
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               Mn A(X = Sn, Ge, Pt) non-collinear magnets. Another typical AFM phase Γ  can be obtained by rotating
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               the atomic magnetic moments in Γ  by 90 degrees in the (111) plane. Both of these two magnetic phases
               have zero scalar chirality, and theoretical studies show that the former and the latter magnetic order display
               a finite and zero anomalous Hall resistivity, respectively. In 2019, Gurung et al. used symmetry analysis and
               density  functional  theory  to  study  the  anomalous  Hall  conductance  in  non-collinear  magnetic
               antiperovskites, revealing that the Γ  magnetic phase in Mn GaN shows a finite value of anomalous Hall
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               conductivity, while the  Γ  magnetic phase displays zero anomalous Hall conductivity . In 2020,
                                       5g
                                                                                               [28]
               Samathrakis et al. theoretically calculated the tailoring of the anomalous Hall effect in the non-collinear
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               antiperovskite Mn GaN, revealing the large intrinsic anomalous Hall effect caused by the strain in the Γ
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