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Liu et al. Microstructures 2023;3:2023001  https://dx.doi.org/10.20517/microstructures.2022.23  Page 7 of 21

               Construction of heterostructures
               In addition to the nanostructural modification of photoanodes, a highly conductive and active
               semiconductor  can  also  be  used  directly  on  the  photoanode  surface  to  form  a  heterojunction
               photoelectrode. The construction of heterojunctions can effectively separate the photoelectron holes by
               satisfying the appropriate energy level positions between the two semiconductors (p-n/n-n) [43,44] . For low-
               energy light-induced holes, Z-type nanocomposites have been successfully constructed by coupling suitable
               band gap semiconductors . Photoanodes with Z-type electronic transfer result in enhanced light-
                                      [45]
               harvesting properties and charge separation. For a g-C N /semiconductor composite, the photogenerated
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               electrons of the semiconductor transfer to the valence band of g-C N  and then recombine with the
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               photogenerated holes derived from g-C N . Therefore, the photogenerated electrons on g-C N  and the
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               photogenerated holes on modified oxides have strong reducing and oxidizing properties. This can lead to
               charge separation and improve the PEC activity of the catalyst. MOFs with a large surface area are also used
               in PEC systems. The construction of MOF-based heterojunctions can increase the internal electric field by
               the conjugated π electrons in the linkers [Figure 4]. Wang et al. fabricated Z-scheme heterostructures of
               TiO  nanorods (NRs) coated by MOFs and obtained UiO-66@TiO  and UiO-67@TiO  photoanodes.
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               Compared with pristine TiO , UiO-66@TiO  and UiO-67@TiO  showed enhanced photocurrent density in
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               the PEC water oxidation process .
                                          [25]
               For a type-II heterojunction, the semiconductor photoanode will be combined with a semiconductor that
               has a relatively low valence band position. The photogenerated electrons in the conduction band of the
               modified semiconductor will be transferred to the photoanode. The photogenerated holes in the
               semiconductor anode will be transferred to the modified semiconductor and further induce the transfer of
               holes. Different type-II heterojunction photoanodes, such as WO /BiVO , ZnO/BiVO , ZnO/Fe O ,
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               TiO /ZnO, and so on, have been reported with remarkable PEC performance. Maity et al. fabricated a one-
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               dimensional  n-ZnO/p-ZnCo O   nanoheterojunction  photoanode . In  this  type-II  heterojunction
                                                                           [46]
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               photoanode, the ZnCo O  surface overlayer passivated the surface states of ZnO nanorods, thereby
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               significantly reducing the recombination of photogenerated electron-hole pairs. The generated holes from
               the ZnO nanorods can migrate rapidly to the surface of ZnCo O  and initiate the OER. Compared with the
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               pristine ZnO photoanode, the n-ZnO/p-ZnCo O  nanoheterojunction photoanode achieved a significant
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                                           [46]
               increase in photocurrent density . N-type semiconductors with suitable band edges for water oxidation
               have also been coupled with photoanodes to improve the PEC water splitting performance. Ho et al.
               constructed an epitaxial Fe TiO /ZnO nanodendrite heterojunction array photoanode. Due to the
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               decoupled light harvesting and hole transport paths, the photocurrent density was greatly improved .
                                                                                                       [47]
               Type-II heterojunctions are widely used for hole modulation. The construction of the heterojunction
               reduces the chance of photogenerated carrier recombination, thereby improving the energy conversion
               efficiency of PEC catalysts. In addition to these, in order to fully reveal and exploit the advantages of
               heterostructures, more in-depth fundamental research, especially on the understanding of interfacial
               properties, is required.
               Loading of cocatalysts
               Coupling semiconductor photoanodes with good electrocatalytic OER cocatalysts is a common strategy to
               enhance the charge transfer efficiency from the semiconductor to the electrolyte and improve the oxidation
                      [48]
               kinetics . The  addition  of  OER  catalysts  can  significantly  inhibit  the  surface  recombination  of
               photogenerated charge carriers and reduce the accumulation of holes on the electrode surface. Moreover,
               some OER cocatalysts have been reported to passivate the photoanode surface to prevent corrosion of the
               photoanode, thereby improving its stability under operating conditions. Noble metal oxides, such as RuO
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               and IrO , are the most commonly used hole transfer cocatalysts, which can effectively reduce the
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                                             [17]
               overpotential of oxidation reactions . However, due to the high cost of these catalysts, the development of
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