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  <front>
    <journal-meta>
      <journal-id journal-id-type="nlm-ta">Adv. Energy Convers.</journal-id>
      <journal-id journal-id-type="publisher-id">aec</journal-id>
      <journal-title-group>
        <journal-title>Advanced Energy Conversion</journal-title>
      </journal-title-group>
      <issn pub-type="epub"/>
      <publisher>
        <publisher-name>OAE Publishing Inc.</publisher-name>
      </publisher>
    </journal-meta>
    <article-meta>
      <article-id pub-id-type="doi">10.20517/aec.2026.14</article-id>
      <article-id pub-id-type="publisher-id">AEC-2026-14</article-id>
      <article-categories>
        <subj-group>
          <subject>Research Highlight</subject>
        </subj-group>
      </article-categories>
      <title-group>
        <article-title>Stabilizing moisture-sensitive thermoelectrics via anodic protection</article-title>
      </title-group>
      <contrib-group>
        <contrib contrib-type="author" corresp="yes">
          <contrib-id contrib-id-type="orcid">https://orcid.org/0000-0002-3148-6600</contrib-id>
          <name>
            <surname>Yu</surname>
            <given-names>Yuan</given-names>
          </name>
          <xref ref-type="aff" rid="I1">
            <sup>1</sup>
          </xref>
          <xref ref-type="corresp" rid="cor1">*</xref>
        </contrib>
        <contrib contrib-type="author">
          <name>
            <surname>Zhang</surname>
            <given-names>Qi</given-names>
          </name>
          <xref ref-type="aff" rid="I1">
            <sup>1</sup>
          </xref>
        </contrib>
        <contrib contrib-type="author" corresp="yes">
          <contrib-id contrib-id-type="orcid">https://orcid.org/0000-0003-1498-1025</contrib-id>
          <name>
            <surname>Wuttig</surname>
            <given-names>Matthias</given-names>
          </name>
          <xref ref-type="aff" rid="I1">
            <sup>1</sup>
          </xref>
          <xref ref-type="aff" rid="I2">
            <sup>2</sup>
          </xref>
          <xref ref-type="corresp" rid="cor1">*</xref>
        </contrib>
      </contrib-group>
      <aff id="I1"><sup>1</sup>Institute of Physics (IA), RWTH Aachen University, Aachen 52074, Germany.</aff>
      <aff id="I2"><sup>2</sup>Peter Grünberg Institute (PGI 10), Forschungszentrum Jülich, Jülich 52428, Germany.</aff>
      <author-notes>
        <corresp id="cor1">Correspondence to: Dr. Yuan Yu, Institute of Physics (IA), RWTH Aachen University, Aachen 52074, Germany. E-mail: <email>yu@physik.rwth-aachen.de</email>; Prof. Matthias Wuttig, Institute of Physics (IA), RWTH Aachen University, Aachen 52074, Germany. E-mail: <email>wuttig@physik.rwth-aachen.de</email></corresp>
        <fn fn-type="other">
          <p><bold>Received:</bold> 25 Apr 2026 | <bold>First Decision:</bold> 7 May 2026 | <bold>Revised:</bold> 11 May 2026 | <bold>Accepted:</bold> 21 May 2026 | <bold>Published:</bold> 29 May 2026</p>
        </fn>
        <fn fn-type="other">
          <p><bold>Academic Editor:</bold> Wei-Mon Yan | <bold>Copy Editor:</bold> Shu-Yuan Duan | <bold>Production Editor:</bold> Shu-Yuan Duan</p>
        </fn>
      </author-notes>
      <pub-date pub-type="ppub">
        <year>2026</year>
      </pub-date>
      <pub-date pub-type="epub">
        <day>29</day>
        <month>5</month>
        <year>2026</year>
      </pub-date>
      <volume>1</volume>
	  <issue>1</issue>
      <elocation-id>2</elocation-id>
      <permissions>
        <copyright-statement>© The Author(s) 2026.</copyright-statement>
        <license xlink:href="https://creativecommons.org/licenses/by/4.0/">
          <license-p>© The Author(s) 2026.<bold>Open Access</bold>This article is licensed under a Creative Commons Attribution 4.0 International License (<uri xlink:href="https://creativecommons.org/licenses/by/4.0/">https://creativecommons.org/licenses/by/4.0/</uri>), which permits unrestricted use, sharing, adaptation, distribution and reproduction in any medium or format, for any purpose, even commercially, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.</license-p>
        </license>
      </permissions>
    </article-meta>
  </front>
  <body>
    <sec id="sec1">
      <title>MAIN TEXT</title>
      <p>The rapidly growing demand for thermal management in advanced fields such as integrated circuits, optical communications, and low-temperature medicine has accelerated the development of efficient, quiet, and compact thermoelectric cooling devices<sup>[<xref ref-type="bibr" rid="B1">1</xref>-<xref ref-type="bibr" rid="B3">3</xref>]</sup>. However, conventional Bi<sub>2</sub>Te<sub>3</sub>-based systems are constrained by the scarcity of tellurium (Te) and limited performance at elevated temperatures due to their narrow band gap and associated bipolar effects, which lead to rapid efficiency degradation above about 400 K<sup>[<xref ref-type="bibr" rid="B4">4</xref>,<xref ref-type="bibr" rid="B5">5</xref>]</sup>. In contrast, Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> exhibits excellent thermoelectric performance over a broad temperature range (300-773 K), along with advantages such as low cost, light weight, and good mechanical robustness<sup>[<xref ref-type="bibr" rid="B6">6</xref>,<xref ref-type="bibr" rid="B7">7</xref>]</sup>. These attributes make them strong candidates to replace n-type Bi<sub>2</sub>Te<sub>3</sub> alloys in next-generation devices<sup>[<xref ref-type="bibr" rid="B8">8</xref>]</sup>. However, their practical application is severely hindered by a critical challenge: the high chemical reactivity of Mg makes these materials vulnerable to moisture-induced corrosion, leading to rapid performance degradation<sup>[<xref ref-type="bibr" rid="B9">9</xref>,<xref ref-type="bibr" rid="B10">10</xref>]</sup>. Existing protection strategies, such as using organic, HfO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>, and Mg-Mn alloy coatings, provide only partial mitigation and remain susceptible to failure due to cracking or delamination<sup>[<xref ref-type="bibr" rid="B11">11</xref>,<xref ref-type="bibr" rid="B12">12</xref>]</sup>. More importantly, they fail to address corrosion during material storage and processing. Therefore, developing a fundamental solution that ensures intrinsic humidity stability while preserving high thermoelectric performance throughout the entire material lifecycle remains an urgent priority.</p>
      <p>In a study published in <italic>Nature Materials</italic>, Sui and co-workers introduced an innovative sacrificial anodic protection method into the design of Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> materials and devices<sup>[<xref ref-type="bibr" rid="B13">13</xref>]</sup>. Through multi-objective optimization, they screened and constructed <italic>in situ</italic> uniformly distributed multi-scale Mg<sub>17</sub>Al<sub>12</sub> anode second phases within the Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> matrix [<xref ref-type="fig" rid="fig1">Figure 1</xref>]. Owing to its lower equilibrium potential, Mg<sub>17</sub>Al<sub>12</sub> forms micro-galvanic cells that preferentially corrode, thereby providing thermodynamic cathodic protection to the matrix. Meanwhile, corrosion-induced Mg/Al hydroxides and oxides generate a self-healing hybrid passivation layer, which further isolates the material from moisture. The self-healing capability depends on the Pilling-Bedworth (PB) ratio<sup>[<xref ref-type="bibr" rid="B14">14</xref>]</sup>. A PB ratio slightly above unity facilitates self-healing by generating a moderate compressive stress that ensures newly formed oxides seamlessly seal surface voids, preventing further moisture infiltration. This intrinsic material design reduces the average corrosion rate of Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> by 92% (to 95 μm·year<sup>-1</sup>) in air and by 86% (to 0.36 μm·h<sup>-1</sup>) in water, effectively solving corrosion issues during material storage and processing that cannot be addressed by conventional coating strategies. Importantly, since the Mg<sub>17</sub>Al<sub>12</sub> phase is generated <italic>in situ</italic> by introducing Al, the content of Mg in the matrix will also be concomitantly influenced. Thus, the content of Mg vacancies, as well as the carrier concentration and thermoelectric properties, might change with the addition of Al<sup>[<xref ref-type="bibr" rid="B15">15</xref>]</sup>. For practical applications, we must balance the stability and energy-conversion efficiency. In the <italic>Nature Materials</italic> study<sup>[<xref ref-type="bibr" rid="B13">13</xref>]</sup>, the thermoelectric performance is even slightly enhanced by incorporating 20 at% Al. Moreover, the biased carrier concentration in the matrix due to the <italic>in situ</italic> formation of the second phase can be further optimized via tuning the content of other dopants, such as Te and lanthanide elements<sup>[<xref ref-type="bibr" rid="B16">16</xref>]</sup>. Therefore, the second-phase engineering, in conjunction with carrier concentration optimization, can enable an ideal balance between stability and functionality. This strategy is also generalizable, as demonstrated in other moisture-sensitive systems, including Mg<sub>2</sub>(Sn, Ge) and CaMg<sub>2</sub>Bi<sub>2</sub>, through incorporating Al to construct anodic secondary phases. Yet, the appropriate dopants can vary from Al, depending on the matrix material, the thermodynamically favorable second phase, and the difference in equilibrium potential between them. The <italic>Nature Materials</italic> article offers an excellent paradigm and principles for screening suitable element candidates.</p>
      <fig id="fig1" position="float">
        <label>Figure 1</label>
        <caption>
          <p>Schematic of the autonomous anodic protection mechanism. The Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> matrix, Mg<sub>17</sub>Al<sub>12</sub> secondary phase, and the condensed water film collectively constitute a self-driven micro-galvanic cell, functioning as the cathode, sacrificial anode, and local electrolyte, respectively. Driven by the electrochemical potential gradient, the anodic Mg<sub>17</sub>Al<sub>12</sub> undergoes preferential oxidation, releasing Mg<sup>2+</sup> and Al<sup>3+</sup> ions while concurrently transferring electrons to the cathodic matrix. This electron flux facilitates the reduction of water at the Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> surface into H<sub>2</sub> gas and OH<sup>-</sup> ions. The resultant local supersaturation triggers the precipitation of dense Mg/Al-based oxides and hydroxides, which rapidly coalesce into a passivation film that seamlessly shields the Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> surface against further environmental corrosion.</p>
        </caption>
        <graphic xlink:href="aec1014.fig.1.jpg"/>
      </fig>
      <p>In addition to material optimization, Sui and colleagues tackled another hidden corrosion source that limits device-level reliability, namely accelerated material corrosion induced by the interface barrier layer. The commonly used Fe interface layer possesses a much higher equilibrium potential than the Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> matrix, accelerating corrosion of the matrix during operation<sup>[<xref ref-type="bibr" rid="B17">17</xref>]</sup>. To overcome this, the team replaced Fe with Mg<sub>17</sub>Al<sub>12</sub> as the interface layer. This design maintains low contact resistivity, matched thermal expansion, and chemical stability, which are essential requirements for thermoelectric interface materials<sup>[<xref ref-type="bibr" rid="B18">18</xref>,<xref ref-type="bibr" rid="B19">19</xref>]</sup>, while simultaneously eliminating interfacial galvanic corrosion and providing cathodic protection. As a result, no performance degradation of the thermoelectric device was observed after 28 days under harsh hot-humid conditions (350 K, 70% RH). The study also reminds us that the galvanic stability, which had been overlooked, should also be included in the design principles of thermoelectric interface materials in future studies.</p>
      <p>This work shifts the design paradigm for thermoelectric materials and devices from conventional coating strategies to sacrificial anode protection. It highlights the power of an integrated, multi-scale approach combining electrochemistry, materials science, and device engineering to enhance both stability and functionality. Beyond enabling moisture-resistant and high-performance Mg-based thermoelectric devices, this study establishes a broadly applicable design strategy for corrosion-resistant functional materials.</p>
    </sec>
  </body>
  <back>
    <sec>
      <title>DECLARATIONS</title>
      <sec>
        <title>Authors’ contributions</title>
        <p>Wrote the manuscript: Yu, Y.</p>
        <p>Created the figure: Zhang, Q. </p>
        <p>Contributed through helpful discussions: Wuttig, M.</p>
      </sec>
      <sec>
        <title>Availability of data and materials </title>
        <p>Not applicable.</p>
      </sec>
      <sec>
        <title>AI and AI-assisted tools statement</title>
        <p>Not applicable.</p>
      </sec>
      <sec>
        <title>Financial support and sponsorship</title>
        <p>This work was supported by the German Research Foundation (DFG) within the Collaborative Research Center SFB 917.</p>
      </sec>
      <sec>
        <title>Conflicts of interest</title>
        <p>Yu, Y. is an Editorial Board Member of the <italic>Advanced Energy Conversion </italic>journal. He had no involvement in the review or editorial process of this manuscript, including but not limited to reviewer selection, evaluation, or the final decision, while the other authors have declared that they have no conflicts of interest.</p>
      </sec>
      <sec>
        <title>Ethical approval and consent to participate</title>
        <p>Not applicable.</p>
      </sec>
      <sec>
        <title>Consent for publication</title>
        <p>Not applicable.</p>
      </sec>
      <sec>
        <title>Copyright</title>
        <p>© The Author(s) 2026.</p>
      </sec>
    </sec>
    <ref-list>
      <ref id="B1">
        <label>1</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Yu</surname>
              <given-names>Y.</given-names>
            </name>
          </person-group>
          <article-title>Advancing thermoelectrics from materials to devices</article-title>
          <source>Joule</source>
          <year>2026</year>
          <volume>10</volume>
          <fpage>102275</fpage>
          <pub-id pub-id-type="doi">10.1016/j.joule.2025.102275</pub-id>
        </element-citation>
      </ref>
      <ref id="B2">
        <label>2</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Snyder</surname>
              <given-names>G. J.</given-names>
            </name>
            <name>
              <surname>Leblanc</surname>
              <given-names>S.</given-names>
            </name>
            <name>
              <surname>Crane</surname>
              <given-names>D.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Distributed and localized cooling with thermoelectrics</article-title>
          <source>Joule</source>
          <year>2021</year>
          <volume>5</volume>
          <fpage>748</fpage>
          <lpage>51</lpage>
          <pub-id pub-id-type="doi">10.1016/j.joule.2021.02.011</pub-id>
        </element-citation>
      </ref>
      <ref id="B3">
        <label>3</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Li</surname>
              <given-names>C.</given-names>
            </name>
            <name>
              <surname>Luo</surname>
              <given-names>Y.</given-names>
            </name>
            <name>
              <surname>Li</surname>
              <given-names>W.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>The on-chip thermoelectric cooler: advances, applications and challenges</article-title>
          <source>Chip</source>
          <year>2024</year>
          <volume>3</volume>
          <fpage>100096</fpage>
          <pub-id pub-id-type="doi">10.1016/j.chip.2024.100096</pub-id>
        </element-citation>
      </ref>
      <ref id="B4">
        <label>4</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Zhang</surname>
              <given-names>X.</given-names>
            </name>
            <name>
              <surname>Zhu</surname>
              <given-names>H.</given-names>
            </name>
            <name>
              <surname>Dong</surname>
              <given-names>X.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>High-performance MgAgSb/Mg<sub>3</sub>(Sb,Bi)<sub>2</sub>-based thermoelectrics with η = 12% at T ≤ 583K</article-title>
          <source>Joule</source>
          <year>2024</year>
          <volume>8</volume>
          <fpage>3324</fpage>
          <lpage>35</lpage>
          <pub-id pub-id-type="doi">10.1016/j.joule.2024.08.013</pub-id>
        </element-citation>
      </ref>
      <ref id="B5">
        <label>5</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Liu</surname>
              <given-names>Z.</given-names>
            </name>
            <name>
              <surname>Guo</surname>
              <given-names>Z.</given-names>
            </name>
            <name>
              <surname>Li</surname>
              <given-names>A.</given-names>
            </name>
            <name>
              <surname>Wang</surname>
              <given-names>L.</given-names>
            </name>
            <name>
              <surname>Sui</surname>
              <given-names>J.</given-names>
            </name>
            <name>
              <surname>Mori</surname>
              <given-names>T.</given-names>
            </name>
          </person-group>
          <article-title>Tellurium-free thermoelectric materials and devices for low-temperature energy harvesting</article-title>
          <source>Nat. Rev. Mater.</source>
          <year>2026</year>
          <fpage>923</fpage>
          <pub-id pub-id-type="doi">10.1038/s41578-026-00923-5</pub-id>
        </element-citation>
      </ref>
      <ref id="B6">
        <label>6</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Mao</surname>
              <given-names>J.</given-names>
            </name>
            <name>
              <surname>Zhu</surname>
              <given-names>H.</given-names>
            </name>
            <name>
              <surname>Ding</surname>
              <given-names>Z.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>High thermoelectric cooling performance of n-type Mg<sub>3</sub>Bi<sub>2</sub>-based materials</article-title>
          <source>Science</source>
          <year>2019</year>
          <volume>365</volume>
          <fpage>495</fpage>
          <lpage>8</lpage>
          <pub-id pub-id-type="doi">10.1126/science.aax7792</pub-id>
        </element-citation>
      </ref>
      <ref id="B7">
        <label>7</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Li</surname>
              <given-names>H.</given-names>
            </name>
            <name>
              <surname>Li</surname>
              <given-names>J.</given-names>
            </name>
            <name>
              <surname>Newton</surname>
              <given-names>M. A. A.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>A critical review of Mg<sub>3</sub>Sb<sub>2</sub>-based thermoelectric materials</article-title>
          <source>Appl. Phys. Express</source>
          <year>2026</year>
          <volume>19</volume>
          <fpage>020101</fpage>
          <pub-id pub-id-type="doi">10.35848/1882-0786/ae3ec8</pub-id>
        </element-citation>
      </ref>
      <ref id="B8">
        <label>8</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Shang</surname>
              <given-names>H.</given-names>
            </name>
            <name>
              <surname>Liang</surname>
              <given-names>Z.</given-names>
            </name>
            <name>
              <surname>Xu</surname>
              <given-names>C.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>N-type Mg<sub>3</sub>Sb<italic><sub>x</sub></italic>Bi<italic><sub>x</sub></italic> alloys as promising thermoelectric materials</article-title>
          <source>Research</source>
          <year>2020</year>
          <volume>2020</volume>
          <fpage>2020/1219461</fpage>
          <pub-id pub-id-type="doi">10.34133/2020/1219461</pub-id>
        </element-citation>
      </ref>
      <ref id="B9">
        <label>9</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Li</surname>
              <given-names>A.</given-names>
            </name>
            <name>
              <surname>Nan</surname>
              <given-names>P.</given-names>
            </name>
            <name>
              <surname>Wang</surname>
              <given-names>Y.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Chemical stability and degradation mechanism of Mg<sub>3</sub>Sb<sub>2</sub>-Bi thermoelectrics towards room-temperature applications</article-title>
          <source>Acta Mater.</source>
          <year>2022</year>
          <volume>239</volume>
          <fpage>118301</fpage>
          <pub-id pub-id-type="doi">10.1016/j.actamat.2022.118301</pub-id>
        </element-citation>
      </ref>
      <ref id="B10">
        <label>10</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Wu</surname>
              <given-names>X.</given-names>
            </name>
            <name>
              <surname>Ma</surname>
              <given-names>X.</given-names>
            </name>
            <name>
              <surname>Yao</surname>
              <given-names>H.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Revealing the chemical instability of Mg<sub>3</sub>Sb<italic><sub>x</sub></italic>Bi<italic><sub>x</sub></italic>-based thermoelectric materials</article-title>
          <source>ACS Appl. Mater. Interfaces</source>
          <year>2023</year>
          <volume>15</volume>
          <fpage>50216</fpage>
          <lpage>24</lpage>
          <pub-id pub-id-type="doi">10.1021/acsami.3c12290</pub-id>
        </element-citation>
      </ref>
      <ref id="B11">
        <label>11</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Ying</surname>
              <given-names>P.</given-names>
            </name>
            <name>
              <surname>Villoro</surname>
              <given-names>R. B.</given-names>
            </name>
            <name>
              <surname>Bahrami</surname>
              <given-names>A.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Performance degradation and protective effects of atomic layer deposition for Mg‐based thermoelectric modules</article-title>
          <source>Adv. Funct. Mater.</source>
          <year>2024</year>
          <volume>34</volume>
          <fpage>2406473</fpage>
          <pub-id pub-id-type="doi">10.1002/adfm.202406473</pub-id>
        </element-citation>
      </ref>
      <ref id="B12">
        <label>12</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Wu</surname>
              <given-names>X.</given-names>
            </name>
            <name>
              <surname>Lin</surname>
              <given-names>Y.</given-names>
            </name>
            <name>
              <surname>Han</surname>
              <given-names>Z.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Interface and surface engineering realized high efficiency of 13% and improved thermal stability in Mg<sub>3</sub>Sb<sub>1.5</sub>Bi<sub>0.5</sub>‐based thermoelectric generation devices</article-title>
          <source>Adv. Energy Mater.</source>
          <year>2022</year>
          <volume>12</volume>
          <fpage>2203039</fpage>
          <pub-id pub-id-type="doi">10.1002/aenm.202203039</pub-id>
        </element-citation>
      </ref>
      <ref id="B13">
        <label>13</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Yu</surname>
              <given-names>Z.</given-names>
            </name>
            <name>
              <surname>Sun</surname>
              <given-names>Y.</given-names>
            </name>
            <name>
              <surname>Wu</surname>
              <given-names>H.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Anodic protection enables moisture-stable Mg<sub>3</sub>(Sb, Bi)<sub>2</sub> for thermoelectric cooling</article-title>
          <source>Nat. Mater.</source>
          <year>2026</year>
          <fpage>2563</fpage>
          <pub-id pub-id-type="doi">10.1038/s41563-026-02563-0</pub-id>
        </element-citation>
      </ref>
      <ref id="B14">
        <label>14</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Jiang</surname>
              <given-names>Q.</given-names>
            </name>
            <name>
              <surname>Lu</surname>
              <given-names>D.</given-names>
            </name>
            <name>
              <surname>Liu</surname>
              <given-names>C.</given-names>
            </name>
            <name>
              <surname>Liu</surname>
              <given-names>N.</given-names>
            </name>
            <name>
              <surname>Hou</surname>
              <given-names>B.</given-names>
            </name>
          </person-group>
          <article-title>The pilling-bedworth ratio of oxides formed from the precipitated phases in magnesium alloys</article-title>
          <source>Front. Mater.</source>
          <year>2021</year>
          <volume>8</volume>
          <fpage>761052</fpage>
          <pub-id pub-id-type="doi">10.3389/fmats.2021.761052</pub-id>
        </element-citation>
      </ref>
      <ref id="B15">
        <label>15</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Jiang</surname>
              <given-names>J.</given-names>
            </name>
            <name>
              <surname>Yuan</surname>
              <given-names>M.</given-names>
            </name>
            <name>
              <surname>Fu</surname>
              <given-names>Y.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Defect-energy-targeted lattice repair delivers high thermoelectric performance in magnesium antimonide</article-title>
          <source>J. Am. Chem. Soc.</source>
          <year>2026</year>
          <volume>148</volume>
          <fpage>12333</fpage>
          <lpage>42</lpage>
          <pub-id pub-id-type="doi">10.1021/jacs.6c02279</pub-id>
          <pub-id pub-id-type="pmid">41830634</pub-id>
          <pub-id pub-id-type="pmcid">PMC13022861</pub-id>
        </element-citation>
      </ref>
      <ref id="B16">
        <label>16</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Zhang</surname>
              <given-names>J.</given-names>
            </name>
            <name>
              <surname>Song</surname>
              <given-names>L.</given-names>
            </name>
            <name>
              <surname>Iversen</surname>
              <given-names>B. B.</given-names>
            </name>
          </person-group>
          <article-title>Probing efficient N‐type lanthanide dopants for Mg<sub>3</sub>Sb<sub>2</sub> thermoelectrics</article-title>
          <source>Advanced Science</source>
          <year>2020</year>
          <volume>7</volume>
          <fpage>2002867</fpage>
          <pub-id pub-id-type="doi">10.1002/advs.202002867</pub-id>
          <pub-id pub-id-type="pmid">33344138</pub-id>
          <pub-id pub-id-type="pmcid">PMC7739952</pub-id>
        </element-citation>
      </ref>
      <ref id="B17">
        <label>17</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Qu</surname>
              <given-names>N.</given-names>
            </name>
            <name>
              <surname>Sun</surname>
              <given-names>Y.</given-names>
            </name>
            <name>
              <surname>Liu</surname>
              <given-names>Z.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Interfacial design contributing to high conversion efficiency in Mg<sub>3</sub>(Sb, Bi)<sub>2</sub>/Bi<sub>2</sub>Te<sub>3</sub> thermoelectric module with superior stability</article-title>
          <source>Adv. Energy Mater.</source>
          <year>2023</year>
          <volume>14</volume>
          <fpage>2302818</fpage>
          <pub-id pub-id-type="doi">10.1002/aenm.202302818</pub-id>
        </element-citation>
      </ref>
      <ref id="B18">
        <label>18</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Liu</surname>
              <given-names>M.</given-names>
            </name>
            <name>
              <surname>Wu</surname>
              <given-names>X.</given-names>
            </name>
            <name>
              <surname>Guo</surname>
              <given-names>M.</given-names>
            </name>
            <etal/>
          </person-group>
          <article-title>Thermoelectric interface materials for reliable power generation</article-title>
          <source>Materials Today</source>
          <year>2025</year>
          <volume>90</volume>
          <fpage>838</fpage>
          <lpage>58</lpage>
          <pub-id pub-id-type="doi">10.1016/j.mattod.2025.09.018</pub-id>
        </element-citation>
      </ref>
      <ref id="B19">
        <label>19</label>
        <element-citation publication-type="journal">
          <person-group person-group-type="author">
            <name>
              <surname>Wu</surname>
              <given-names>X.</given-names>
            </name>
            <name>
              <surname>Mori</surname>
              <given-names>T.</given-names>
            </name>
            <name>
              <surname>Liu</surname>
              <given-names>W.</given-names>
            </name>
          </person-group>
          <article-title>Thermoelectric stability as a design constraint for energy conversion</article-title>
          <source>Joule</source>
          <year>2026</year>
          <volume>10</volume>
          <fpage>102421</fpage>
          <pub-id pub-id-type="doi">10.1016/j.joule.2026.102421</pub-id>
        </element-citation>
      </ref>
    </ref-list>
  </back>
</article>
